An Acetylene-Containing Perylene Diimide Copolymer for High Mobility n-Channel Transistor in Air

2013 ◽  
Vol 46 (6) ◽  
pp. 2152-2158 ◽  
Author(s):  
Xingang Zhao ◽  
Lanchao Ma ◽  
Lei Zhang ◽  
Yugeng Wen ◽  
Jianming Chen ◽  
...  
Keyword(s):  
High Mobility ◽  
Perylene Diimide

An acceptor-acceptor conjugated copolymer based on perylene diimide for high mobility n -channel transistor in air

2012 ◽  
Vol 50 (20) ◽  
pp. 4266-4271 ◽  
Author(s):  
Xingang Zhao ◽  
Yugeng Wen ◽  
Longbin Ren ◽  
Lanchao Ma ◽  
Yunqi Liu ◽  
...  
Keyword(s):  
High Mobility ◽  
Perylene Diimide ◽  
Conjugated Copolymer

scholarly journals High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

2006 ◽  
Vol 89 (11) ◽  
pp. 112108 ◽  
Author(s):  
Shuhei Tatemichi ◽  
Musubu Ichikawa ◽  
Toshiki Koyama ◽  
Yoshio Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Perylene Diimide ◽  
Thermal Treatments

n-Type organic light-emitting transistors with high mobility and improved air stability

2018 ◽  
Vol 6 (3) ◽  
pp. 535-540 ◽  
Author(s):  
Lanchao Ma ◽  
Dashan Qin ◽  
Yunqi Liu ◽  
Xiaowei Zhan
Keyword(s):  
High Mobility ◽  
Perylene Diimide ◽  
Light Emitting ◽  
Organic Light ◽  
Light Emitting Transistors ◽  
A Charge

The first example of n-type organic light-emitting transistors operated in air was demonstrated using perylene diimide as a charge-transporting and light-emitting layer.

High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide

2013 ◽  
Vol 103 (20) ◽  
pp. 203303 ◽  
Author(s):  
Lanchao Ma ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Yunqi Liu ◽  
Xiaowei Zhan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Perylene Diimide ◽  
Bottom Contact

A TEM study of the effect of oxygen on nanocavity formation and precipitation in rapid - solidified Fe-16Ni-9Cr stainless steels

1994 ◽  
Vol 52 ◽  
pp. 700-701
Author(s):  
S. Wisutmethangoon ◽  
T. F. Kelly ◽  
J.E. Flinn
Keyword(s):  
Stainless Steels ◽  
High Mobility ◽  
Hot Extrusion ◽  
Extrusion Ratio ◽  
Gas Atomization ◽  
Cavity Formation ◽  
Nucleation Sites ◽  
Heat Treated ◽  
Different Types ◽  
Effect Of Oxygen

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si
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