High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide

2013 ◽  
Vol 103 (20) ◽  
pp. 203303 ◽  
Author(s):  
Lanchao Ma ◽  
Yunlong Guo ◽  
Yugeng Wen ◽  
Yunqi Liu ◽  
Xiaowei Zhan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Perylene Diimide ◽  
Bottom Contact

scholarly journals High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

2006 ◽  
Vol 89 (11) ◽  
pp. 112108 ◽  
Author(s):  
Shuhei Tatemichi ◽  
Musubu Ichikawa ◽  
Toshiki Koyama ◽  
Yoshio Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Perylene Diimide ◽  
Thermal Treatments

Low-cost lithographically patterned source/drain bottom contacts for high mobility p-type organic thin film transistors

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Bottom Contact ◽  
Gold Metallization

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel

High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors

2013 ◽  
Vol 184 ◽  
pp. 1-4 ◽  
Author(s):  
Hao Chang ◽  
Pengyue Wang ◽  
Haidong Li ◽  
Jidong Zhang ◽  
Donghang Yan
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Simple Method ◽  
Solvent Vapor

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display

2021 ◽  
Vol 52 (S2) ◽  
pp. 395-398
Author(s):  
Yukiharu Uraoka ◽  
Takanori Takahashi ◽  
Mami Fujii ◽  
J.P. Bermundo ◽  
Ryoko Miyanaga ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Degradation Mechanism ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Next Generation ◽  
Paper Degradation
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