Island Nucleation and Growth Dynamics during Submonolayer Vapor Deposition Polymerization

2010 ◽  
Vol 43 (12) ◽  
pp. 5450-5454 ◽  
Author(s):  
I.J. Lee ◽  
Mira Yun
Keyword(s):  
Vapor Deposition ◽  
Growth Dynamics ◽  
Nucleation And Growth ◽  
Island Nucleation

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

scholarly journals Influence of the ultra-slow nucleation and growth dynamics on the room-temperature hysteresis of spin-crossover single crystals

2021 ◽  
pp. 138442
Author(s):  
Volodymyr M. Hiiuk ◽  
Karl Ridier ◽  
Il'ya A. Gural'skiy ◽  
Alexander A. Golub ◽  
Igor O. Fritsky ◽  
...  
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Spin Crossover ◽  
Growth Dynamics ◽  
Nucleation And Growth ◽  
Temperature Hysteresis

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

scholarly journals Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition

2013 ◽  
Vol 103 (18) ◽  
pp. 183116 ◽  
Author(s):  
Grzegorz Lupina ◽  
Mindaugas Lukosius ◽  
Julia Kitzmann ◽  
Jarek Dabrowski ◽  
Andre Wolff ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth

Nucleation, growth, and structure of Al–Mn quasicrystalline thin films prepared by high-temperature vapor deposition

1992 ◽  
Vol 7 (5) ◽  
pp. 1115-1125 ◽  
Author(s):  
P.B. Barna ◽  
A. Csanády ◽  
U. Timmer ◽  
K. Urban
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Growth Process ◽  
Depth Profiling ◽  
Nucleation And Growth ◽  
Quasicrystalline Phase ◽  
X Ray ◽  
Transmission Electron ◽  
Mn Diffusion ◽  
High Temperature Vapor

The nucleation and growth of quasicrystalline thin films during sequential vapor deposition of aluminum and manganese on various substrates have been studied at temperatures between 530 and 650 K. The films were analyzed by transmission electron microscopy, electron diffraction, energy dispersive x-ray analysis, replica techniques, and Auger depth profiling. The quasicrystalline phase is identified as icosahedral. It nucleates on the surfaces of the Al films. There is no indication of substantial bulk Mn diffusion. The growth process is governed by diffusion of Al to the quasicrystal surface where it reacts with the incident Mn.

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