Paracrystalline Lattice Distortion in the Near-Surface Region of Melt-Crystallized Polyethylene Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction

2003 ◽  
Vol 36 (16) ◽  
pp. 5905-5907 ◽  
Author(s):  
Hirohiko Yakabe ◽  
Sono Sasaki ◽  
Osami Sakata ◽  
Atsushi Takahara ◽  
Tisato Kajiyama
Keyword(s):  
Lattice Distortion ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Polyethylene Films

Properties of TiN Coatings Deposited on Nitrogen Ion Implanted Steel C1045

2007 ◽  
Vol 555 ◽  
pp. 59-64
Author(s):  
D. Peruško ◽  
N. Bibić ◽  
S. Petrović ◽  
M. Popović ◽  
M. Novaković ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Strong Dependence ◽  
Surface Region ◽  
Grazing Incidence ◽  
Iron Nitrides ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Tin Coatings ◽  
Nitrogen Ion

The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the properties of deposited TiN coatings were investigated. Nitrogen ion implantations were performed at 40 keV, to the fluences from 5x1016 – 5x1017 ions/cm2. On so prepared substrates we deposited 1.3 μm thick TiN layers by reactive sputtering. Structural characterizations of the samples were performed by grazing incidence X-ray diffraction analysis (GXRD), standard X-ray diffraction analysis (XRD), and scanning electron microscopy (SEM). Microhardness was measured by Vicker’s method. The obtained results indicate the formation of iron-nitrides in the near surface region of the substrates, more pronounced for higher implanted fluences. The structure of the deposited TiN coatings shows a strong dependence on the pre-implantation of the substrates, which is attributed to the changed local structure at the surface. Ion implantation and deposition of hard TiN coatings induce an increase of the microhardness of this low performance steel of more than eight times.

Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 173-179 ◽  
Author(s):  
Maxim B. Kelman ◽  
Paul C. McIntyre ◽  
Bryan C. Hendrix ◽  
Steven M. Bilodeau ◽  
Jeffrey F. Roeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Scattering Geometry ◽  
Pzt Films

Structural properties of polycrystalline Pb(Zr0.35Ti0.65)O3 (PZT) thin films grown by metalorganic chemical vapor deposition on Ir bottom electrodes were investigated. Symmetric x-ray diffraction measurements showed that as-deposited 1500 íthick PZT films are partially tetragonal and partially rhombohedral. Cross-section scanning electron microscopy showed that these films have a polycrystalline columnar microstructure with grains extending through the thickness of the film. X-ray depth profiling using the grazing-incidence asymmetric Bragg scattering geometry suggests that each grain has a bilayer structure consisting of a near-surface region in the etragonal phase and the region at the bottom electrode interface in the rhombohedral hase. The required compatibility between the tetragonal and rhombohedral phases in he proposed layered structure of the 1500 Å PZT can explain the peak shifts observed n the symmetric x-ray diffraction results of thicker PZT films.

scholarly journals Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Lattice Distortion ◽  
Grazing Incidence ◽  
Valence Band Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Highly Sensitive ◽  
Doping Ratio

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

Characterization of Reactive Ion Etch Damage in GaAs by Triple Crystal X-Ray Diffraction

1993 ◽  
Vol 324 ◽  
Author(s):  
Victor S. Wang ◽  
Richard J. Matyi ◽  
Karen J. Nordheden
Keyword(s):  
Bias Voltage ◽  
Diffuse Scattering ◽  
Reciprocal Lattice ◽  
Surface Region ◽  
Perfect Crystal ◽  
X Ray Diffraction ◽  
Reciprocal Lattice Point ◽  
Near Surface ◽  
X Ray ◽  
Imperfect Crystal

AbstractTriple crystal x-ray diffraction (TCXD) is a non-destructive structural characterization tool capable of the separation and direct observation of the dynamic (perfect crystal) and the kinematic (imperfect crystal) components of the total intensity diffracted by a crystal. Specifically, TCXD can be used to measure the magnitude of the diffuse scattering arising from defects in the crystal structure in the immediate vicinity of a reciprocal lattice point. In this study, the effects of BC13 reactive ion etching (RIE) on the near-surface region of GaAs were investigated by analyzing the changes in the diffuse scattering using both the symmetric 004 reflection as well as the highly asymmetric and more surface sensitive 113 reflection. While the results from the 004 reflections revealed little difference between the unetched and the BC13-etched samples, maps of the diffracted intensity around the 113 reflections showed an unexpected and reproducible decrease in the extent of the diffuse scattering in the transverse direction (perpendicular to the < 113 > direction) as the RIE bias voltage was increased. This decrease suggests that the degree of etch damage induced in the GaAs near-surface region is reduced with increasing bias voltage and ion energy. Additionally, the symmetry and orientation of the kinematic scattering was altered. Possible mechanisms for these results willbe discussed.

Microstructure and Oxidation of a Cast Nickel Aluminide Alloy

2002 ◽  
Vol 753 ◽  
Author(s):  
D. Y. Lee ◽  
M. L. Santella ◽  
I. M. Anderson ◽  
G. M. Pharr
Keyword(s):  
Nickel Aluminide ◽  
Volume Fraction ◽  
Surface Region ◽  
Oxidation Products ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
Multivariate Statistical ◽  
Near Surface ◽  
X Ray ◽  
Spectrum Imaging

ABSTRACTSpecimens of the cast Ni3Al alloy IC221M were annealed in air at 900°C to examine the effects of oxidation and thermal aging on the microstructure. The alloy is comprised of a dendritically solidified γ-γ′ matrix containing γ+Ni5Zr eutectic colonies in the interdendritic regions. Microstructures of aged specimens were examined by optical microscopy and energy dispersive X-ray (EDX) spectrum imaging in the scanning electron microscope (SEM). Two primary changes in the microstructures were observed: (1) there is considerable homogenization of the cast microstructures with aging, and (2) the volume fraction of the γ+Ni5Zr eutectic decreases. Oxidation products were identified using x-ray diffraction and EDX spectrum imaging with multivariate statistical analysis (MSA). During the initial stages of oxidation, the first surface oxide to form is mostly NiO with small amounts of Cr2O3, ZrO2, NiCr2O4, and θ-Al2O3. Initially, oxidation occurs primarily in the interdendritic regions due to microsegregation of alloying elements during casting. With further aging, a continuous film of α-Al2O3 forms immediately beneath the surface that eventually evolves into a double layer of α-Al2O3 and NiAl2O4. Although these oxides are constrained to the near surface region, others penetrate to greater depths facilitated by oxidation of the γ+Ni5Zr eutectic colonies. These oxides appear in the microstructure as long, thin spikes of ZrO2 surrounded by a thin sheath of Al2O3.

In situ X-ray diffraction study of stacking fault formation in the near-surface region of transformation induced plasticity steels

2013 ◽  
Vol 530 ◽  
pp. 105-112 ◽  
Author(s):  
David Rafaja ◽  
Christina Krbetschek ◽  
Daria Borisova ◽  
Gerhard Schreiber ◽  
Volker Klemm
Keyword(s):  
Diffraction Study ◽  
Surface Region ◽  
Stacking Fault ◽  
X Ray Diffraction ◽  
Near Surface ◽  
Transformation Induced Plasticity ◽  
X Ray

scholarly journals A multireflection and multiwavelength residual stress determination method using energy dispersive diffraction

2018 ◽  
Vol 51 (3) ◽  
pp. 732-745 ◽  
Author(s):  
Marianna Marciszko ◽  
Andrzej Baczmański ◽  
Manuela Klaus ◽  
Christoph Genzel ◽  
Adrian Oponowicz ◽  
...  
Keyword(s):  
Residual Stress ◽  
Synchrotron Radiation ◽  
Diffraction Method ◽  
Surface Region ◽  
Grazing Incidence ◽  
High Energy ◽  
Energy Dispersive ◽  
X Rays ◽  
X Ray Diffraction ◽  
Near Surface

The main focus of the presented work was the investigation of structure and residual stress gradients in the near-surface region of materials studied by X-ray diffraction. The multireflection method was used to measure depth-dependent stress variation in near-surface layers of a Ti sample (grade 2) subjected to different mechanical treatments. First, the multireflection grazing incidence diffraction method was applied on a classical diffractometer with Cu Kα radiation. The applicability of the method was then extended by using a white synchrotron beam during an energy dispersive (ED) diffraction experiment. An advantage of this method was the possibility of using not only more than one reflection but also different wavelengths of radiation. This approach was successfully applied to analysis of data obtained in the ED experiment. There was good agreement between the measurements performed using synchrotron radiation and those with Cu Kα radiation on the classical diffractometer. A great advantage of high-energy synchrotron radiation was the possibility to measure stresses as well as thea0parameter andc0/a0ratio for much larger depths in comparison with laboratory X-rays.

Fabrication of CaWO4:Eu3+ Thin Films via Electrochemical Methods Assisted by a Novel Post Treatment

2011 ◽  
Vol 194-196 ◽  
pp. 2458-2461 ◽  
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao ◽  
Jian Xiong Yuan ◽  
Qing Hua Zhang ◽  
Yan Hong Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Surface Region ◽  
Luminescent Properties ◽  
Emission Peak ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4 thin films directly through electrochemical techniques. A novel post processing has been proposed to synthesize CaWO4:Eu3+ thin films at room temperature. X-ray diffraction, X-ray photoelectron spectrometry, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that Eu3+-doped CaWO4 films have a tetragonal phase; the content of Eu in the near surface region is much higher than that of the bulk; under the excitation of 310 nm, a sharp emission peak at 616 nm has been observed for Ca0.9WO4:Eu0.13+ thin films.

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