Statistical Analysis of Mounded Surfaces: Application to the Evolution of Ultrathin Gold Film Morphology with Deposition Temperature

Langmuir ◽  
2012 ◽  
Vol 29 (2) ◽  
pp. 717-726 ◽  
Author(s):  
D. Siniscalco ◽  
M. Edely ◽  
J.-F. Bardeau ◽  
N. Delorme
2016 ◽  
Vol 6 (5) ◽  
pp. 1429 ◽  
Author(s):  
Yuusuke Ebihara ◽  
Yuta Sugimachi ◽  
Takahiro Noriki ◽  
Masayuki Shimojo ◽  
Kotaro Kajikawa

2012 ◽  
Vol 7 (1) ◽  
pp. 683 ◽  
Author(s):  
Long-De Wang ◽  
Tong Zhang ◽  
Sheng-Qing Zhu ◽  
Xiao-Yang Zhang ◽  
Qi-Long Wang ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuusuke Ebihara ◽  
Ryoichi Ota ◽  
Takahiro Noriki ◽  
Masayuki Shimojo ◽  
Kotaro Kajikawa

Nanoscale ◽  
2016 ◽  
Vol 8 (8) ◽  
pp. 4657-4666 ◽  
Author(s):  
Akshit Peer ◽  
Rana Biswas

The gold-coated periodic nanocup structure with an ultrathin gold film at the bottom shows extraordinary optical transmission at ∼700 nm wavelength.


2017 ◽  
Vol 19 (40) ◽  
pp. 27259-27265 ◽  
Author(s):  
Guang Yi Jia ◽  
Qiang Zhang ◽  
Zhen Xian Huang ◽  
Shu Bin Huang ◽  
Jing Xu

The incident angle for maximum C excitonic absorption deviates from the SPR angle due to the ultrathin-gold-film-induced optical scattering.


2020 ◽  
Vol 10 (04) ◽  
pp. 2050016
Author(s):  
Sen Wen ◽  
Xingtian Yin ◽  
Haixia Xie ◽  
Yuxiao Guo ◽  
Jie Liu ◽  
...  

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.


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