Ultrathin gold film modified optical properties of excitons in monolayer MoS2

2017 ◽  
Vol 19 (40) ◽  
pp. 27259-27265 ◽  
Author(s):  
Guang Yi Jia ◽  
Qiang Zhang ◽  
Zhen Xian Huang ◽  
Shu Bin Huang ◽  
Jing Xu

The incident angle for maximum C excitonic absorption deviates from the SPR angle due to the ultrathin-gold-film-induced optical scattering.

2020 ◽  
Vol 523 ◽  
pp. 146371 ◽  
Author(s):  
Bowen Liu ◽  
Zhe Zhang ◽  
Kan Liao ◽  
Rong Wu ◽  
Chao Zhu ◽  
...  

2016 ◽  
Vol 6 (5) ◽  
pp. 1429 ◽  
Author(s):  
Yuusuke Ebihara ◽  
Yuta Sugimachi ◽  
Takahiro Noriki ◽  
Masayuki Shimojo ◽  
Kotaro Kajikawa

2013 ◽  
Vol 155 ◽  
pp. 49-52 ◽  
Author(s):  
A.K.M. Newaz ◽  
D. Prasai ◽  
J.I. Ziegler ◽  
D. Caudel ◽  
S. Robinson ◽  
...  

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.


2005 ◽  
Vol 20 (11) ◽  
pp. 3141-3149 ◽  
Author(s):  
Li-Lan Yang ◽  
Yi-Sheng Lai ◽  
J.S. Chen ◽  
P.H. Tsai ◽  
C.L. Chen ◽  
...  

Thin films of SiO2–TiO2 composite oxides with various SiO2:TiO2 compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium tetraisopropoxide (TTIP) as precursors. The composition, crystal structure, and chemical bonding configuration of the as-deposited and annealed SiO2–TiO2 thin films were analyzed using Rutherford backscattering spectrometry (RBS), glancing incident angle x-ray diffraction (GIAXRD) and Fourier transform infrared spectroscopy (FTIR), respectively. Optical properties of the films were characterized by spectroscopic ellipsometry and ultraviolet-visible spectrophotometry. The Si/Ti ratios in the SiO2–TiO2 films agree with the TEOS/TTIP molar ratio in the sol-gel precursor. When the TEOS/(TEOS + TTIP) ratio is greater than 40%, the SiO2–TiO2 thin films remain amorphous (without formation of TiO2 crystalline phase) after annealing at temperatures as high as 700 °C. FTIR spectra indicate that the quantity of Si–O–Ti bonding can be maximized when the TEOS:TTIP in the precursor is 80%:20%. The refractive index of the SiO2–TiO2 films increases approximately linearly to the mixing ratio of TTIP/(TEOS + TTIP). However, SiO2-rich films possess higher ultraviolet-visible transmittance than the TiO2-rich films. The modification of microstructure and chemical bonding configuration in the SiO2–TiO2 films by the composition and its influence on the optical properties are discussed.


Author(s):  
J. C. Prangsma ◽  
D. van Oosten ◽  
L. Kuipers

The optical properties of rectangular subwavelength holes in a gold film are investigated using the light generated when a focused beam of electrons impinges on the sample close to the hole. Using this technique, multi-spectral maps of the holes are obtained with a resolution beyond the optical diffraction limit. The results show the influence of hole shape on the spectrum of locally scattered light. Rectangular holes of varying shape and size are investigated, and the spatial distribution of the polarization of the observed light is measured. The influence of neighbouring holes is investigated by measuring small clusters of holes.


2018 ◽  
Vol 50 (9) ◽  
Author(s):  
Zhen Cui ◽  
Xia Wang ◽  
Yingchun Ding ◽  
Chao Zhang ◽  
Meiqin Li

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