Nanolithography of Single-Layer Graphene Oxide Films by Atomic Force Microscopy

Langmuir ◽  
2010 ◽  
Vol 26 (9) ◽  
pp. 6164-6166 ◽  
Author(s):  
Gang Lu ◽  
Xiaozhu Zhou ◽  
Hai Li ◽  
Zongyou Yin ◽  
Bing Li ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Oxide Films ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force

scholarly journals Configurational Effects on Strain and Doping at Graphene-Silver Nanowire Interfaces

2020 ◽  
Vol 10 (15) ◽  
pp. 5157
Author(s):  
Frank Lee ◽  
Manoj Tripathi ◽  
Peter Lynch ◽  
Alan B. Dalton
Keyword(s):  
Atomic Force Microscopy ◽  
Adhesion Force ◽  
Single Layer ◽  
Silver Nanowire ◽  
Single Layer Graphene ◽  
Fermi Energy Level ◽  
Essential Information ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force

Graphene shows substrate-dependent physical and electronic properties. Here, we presented the interaction between single-layer graphene and silver nanowire (AgNW) in terms of physical straining and doping. We observed a snap-through event for single-layer graphene/AgNW at a separation of AgNWs of 55 nm, beyond the graphene suspended over the nanowires. The adhesion force between the Atomic Force Microscopy (AFM) tip apex and the suspended graphene was measured as higher than the conformed one by 1.8 nN. The presence of AgNW modulates the Fermi energy level of graphene and reduces the work function by 0.25 eV, which results in n-type doping. Consequently, a lateral p-n-p junction is formed with single AgNW. The correlation Raman plot between G-2D modes reveals the increment of strain in graphene of 0.05% due to the curvature around AgNW, and 0.01% when AgNW lies on the top of graphene. These results provide essential information in inspecting the physical and electronic influences from AgNW.

Single-layer graphene oxide films on a silicon surface

2013 ◽  
Vol 58 (11) ◽  
pp. 1614-1618 ◽  
Author(s):  
A. E. Aleksenskii ◽  
P. N. Brunkov ◽  
A. T. Dideikin ◽  
D. A. Kirilenko ◽  
Yu. V. Kudashova ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Surface ◽  
Oxide Films ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Structural Strain in Single Layer Graphene Fabricated on SiC

2019 ◽  
Vol 963 ◽  
pp. 161-165
Author(s):  
Wan Cheng Yu ◽  
Xiu Fang Chen ◽  
Xiao Bo Hu ◽  
Xian Gang Xu ◽  
Peng Jin ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Single Layer ◽  
Ex Situ ◽  
Single Layer Graphene ◽  
Growth Time ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
Structural Strain

Single layer graphene is fabricated on the Si face of silicon carbide through thermal decomposition. The thickness of graphene was checked by a combination of ex situ Kelvin probe force microscopy together with Raman spectroscopy and atomic force microscopy. The amount of residual strain induced is calculated to between 1.3% and 0.7%. Results also show that the magnitude of strain increased with growth time while the uniformity of strain improved.

Sign in / Sign up

Export Citation Format

Share Document