Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films

1997 ◽  
Vol 101 (46) ◽  
pp. 9537-9547 ◽  
Author(s):  
C.-M. Chiang ◽  
S. M. Gates ◽  
Szetsen S. Lee ◽  
M. Kong ◽  
Stacey F. Bent
Keyword(s):  
Amorphous Silicon ◽  
Silicon Hydride

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

2003 ◽  
Vol 547 (3) ◽  
pp. L865-L870 ◽  
Author(s):  
W.M.M. Kessels ◽  
J.P.M. Hoefnagels ◽  
P.J. van den Oever ◽  
Y. Barrell ◽  
M.C.M. van de Sanden
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Surface Reactivity ◽  
Silicon Hydride ◽  
Silicon Growth

Simulation of Amorphous Silicon Hydride Solar Cells Using a Personal Computer

1991 ◽  
Vol 219 ◽  
Author(s):  
Finley R. Shapiro
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Personal Computer ◽  
Personal Computers ◽  
Silicon Hydride

ABSTRACTThe simulation of a-Si:H solar cells has the potential to make a major contribution to the development of improved devices. However, to achieve this potential, simulations must run quickly on personal computers. This will require simplified approaches which are justified by the correspondence of their results to more elaborate but slower running simulations.

Optical Phenomena at the Absorption Edge of Crystalline and Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
George D. Cody
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Absorption Edge ◽  
Crystalline Silicon ◽  
Dipole Matrix Element ◽  
Silicon Hydride ◽  
Energy Gaps ◽  
Site Disorder ◽  
Optical Phenomena

ABSTRACTOptical phenomena associated with the absorption edge of crystalline silicon (c-Si) and amorphous silicon hydride (a-Si:H) are presented and compared. The optical properties discussed include the energy dependence, dipole matrix element and density of states associated with the absorption edge; the temperature dependence of the relevant optical energy gaps, and finally the magnitude and temperature dependence of the slope of the Urbach edge for each material. The comparison suggests that the optical properties of the two materials are closely related and that the absorption edge of a-Si:H may be derived from the effect of site disorder on the zone center direct gap of c-Si.

Highly stable amorphous silicon hydride

2003 ◽  
Vol 80 (1) ◽  
pp. 1-20 ◽  
Author(s):  
Randell L Mills ◽  
Bala Dhandapani ◽  
Jiliang He
Keyword(s):  
Amorphous Silicon ◽  
Silicon Hydride
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