Simulation of Amorphous Silicon Hydride Solar Cells Using a Personal Computer

1991 ◽  
Vol 219 ◽  
Author(s):  
Finley R. Shapiro
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Personal Computer ◽  
Personal Computers ◽  
Silicon Hydride

ABSTRACTThe simulation of a-Si:H solar cells has the potential to make a major contribution to the development of improved devices. However, to achieve this potential, simulations must run quickly on personal computers. This will require simplified approaches which are justified by the correspondence of their results to more elaborate but slower running simulations.

Amorphous silicon solar cells on textured aluminium substrate prepared by electrical etching

Solar Cells ◽  
1986 ◽  
Vol 17 (2-3) ◽  
pp. 191-200 ◽  
Author(s):  
Tokumi Mase ◽  
Hiroshi Takei ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Aluminium Substrate

Shunt resistance spatial variations in amorphous silicon solar cells

2021 ◽  
Vol 108 ◽  
pp. 104960
Author(s):  
Issa Etier ◽  
Anas Al Tarabsheh ◽  
Nithiyananthan Kannan
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Spatial Variations ◽  
Silicon Solar Cells ◽  
Shunt Resistance

Development of n-μc-SiOx:H as cost effective back reflector and its application to thin film amorphous silicon solar cells

Solar Energy ◽  
2013 ◽  
Vol 97 ◽  
pp. 591-595 ◽  
Author(s):  
C. Banerjee ◽  
T. Srikanth ◽  
U. Basavaraju ◽  
R.M. Tomy ◽  
M.G. Sreenivasan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Cost Effective ◽  
Silicon Solar Cells ◽  
Back Reflector

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

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