Cobalt Silicide Nanoparticles in Mesoporous Silica as Efficient Naphthalene Hydrogenation Catalysts by Chemical Vapor Deposition

2010 ◽  
Vol 114 (9) ◽  
pp. 3962-3967 ◽  
Author(s):  
Anqi Zhao ◽  
Xiaofei Zhang ◽  
Xiao Chen ◽  
Jingchao Guan ◽  
Changhai Liang
Keyword(s):  
Chemical Vapor Deposition ◽  
Mesoporous Silica ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Silicide ◽  
Hydrogenation Catalysts

ChemInform Abstract: Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon (100) from Low Temperature Chemical Vapor Deposition of Cobalt.

ChemInform ◽  
2001 ◽  
Vol 32 (20) ◽  
pp. no-no ◽  
Author(s):  
Ana R. Londergan ◽  
Guillermo Nuesca ◽  
Cindy Goldberg ◽  
Gregory Peterson ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Silicide

Formation of cobalt silicide nanoparticles on graphene with a synergistic effect and high stability for ethanol oxidation

RSC Advances ◽  
2016 ◽  
Vol 6 (36) ◽  
pp. 30293-30300 ◽  
Author(s):  
Mingmei Zhang ◽  
Denghui Pan ◽  
Yuan Li ◽  
Zaoxue Yan ◽  
Suci Meng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synergistic Effect ◽  
Vapor Deposition ◽  
High Stability ◽  
Ethanol Oxidation ◽  
Chemical Vapor ◽  
Average Diameter ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Cobalt Silicide

Stable cobalt silicide (CoSi) with an average diameter of less than 4 nm is uniformly decorated with graphene by a chemical vapor deposition method.

Chemical Vapor Deposition of Cobalt Silicide

1988 ◽  
Vol 131 ◽  
Author(s):  
Gary A. West ◽  
Karl W. Beeson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Cobalt Silicide

ABSTRACTCobalt silicide films have been deposited by chemical vapor deposition using Co2 (CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2 H6 as the Si source. The Co:Si ratio of the films increases with the deposition temperature, and CoSi2 stoichiometry is obtained at 300° C using SiH4 or at 225° C when Si2 H6 is the Si precursor. Resistivities of films deposited in the range CoSi2.0 to CoSi3.0. are typically 200 microohm-cm and drop to 30 – 40 microohm-cm upon annealing at 900° C.

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