Chemical Vapor Deposition of Cobalt Silicide

1988 ◽  
Vol 131 ◽  
Author(s):  
Gary A. West ◽  
Karl W. Beeson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Cobalt Silicide

ABSTRACTCobalt silicide films have been deposited by chemical vapor deposition using Co2 (CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2 H6 as the Si source. The Co:Si ratio of the films increases with the deposition temperature, and CoSi2 stoichiometry is obtained at 300° C using SiH4 or at 225° C when Si2 H6 is the Si precursor. Resistivities of films deposited in the range CoSi2.0 to CoSi3.0. are typically 200 microohm-cm and drop to 30 – 40 microohm-cm upon annealing at 900° C.

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

scholarly journals Electrical Resistivity of Ni–Fe Wires Coated with Sn Using low-Pressure Chemical Vapor Deposition

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 317
Author(s):  
Jun-Hyun Kim ◽  
Jeong Geun Bak ◽  
Chang-Koo Kim
Keyword(s):  
Electrical Resistivity ◽  
Chemical Vapor Deposition ◽  
Electron Scattering ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Reaction Products ◽  
Irregular Shapes ◽  
Pressure Chemical

In this study, we demonstrated that the deposition of Sn on Ni–Fe wires using low-pressure chemical vapor deposition (LPCVD) can be used to control the electrical resistivity of the wires. Furthermore, the effect of the deposition temperature on the resistivity of the Ni–Fe wires was investigated. The resistivity of the Sn-deposited Ni–Fe wires was found to increase monotonically with the deposition temperature from 550 to 850 °C. Structural and morphological analyses revealed that electron scattering by Ni3Sn2 and Fe3Sn particulates, which were the reaction products of LPCVD of Sn on the surface of the Ni–Fe wires, was the cause of the resistivity increase. These coalesced particulates displayed irregular shapes with an increase in the deposition temperature, and their size increased with the deposition temperature. Owing to these particulate characteristics, the Sn content increased with the deposition temperature. Furthermore, the temperature dependency of the Sn content followed a pattern very similar to that of the resistivity, indicating that the atomic content of Sn directly affected the resistivity of the Ni–Fe wires.

Effect of Deposition Temperature on Surface Roughness of Nanocrystalline Diamond Film

2012 ◽  
Vol 476-478 ◽  
pp. 2353-2356
Author(s):  
Wen Qi Dai ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Yi Feng Liu ◽  
Ke Tang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Different Temperatures ◽  
Hot Filament

Nanocrystalline diamond (NCD) films were synthesized by hot-filament chemical vapor deposition (HFCVD) method at different temperatures (600 °C, 620°C, 640°C and 660°C). The AFM and Raman analyses demonstrated that deposition temperature has a great effect on the surface roughness and quality of NCD films and 620°C is the temperature to grow NCD films with smooth surfaces.

ChemInform Abstract: Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon (100) from Low Temperature Chemical Vapor Deposition of Cobalt.

ChemInform ◽  
2001 ◽  
Vol 32 (20) ◽  
pp. no-no ◽  
Author(s):  
Ana R. Londergan ◽  
Guillermo Nuesca ◽  
Cindy Goldberg ◽  
Gregory Peterson ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Silicide

Activated Pulsed Metalorganic Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films Using Alkyl Precursors

2010 ◽  
Vol 1251 ◽  
Author(s):  
Denis Reso ◽  
Mindaugas Silinskas ◽  
Bodo Kalkofen ◽  
Marco Lisker ◽  
Edmund P. Burte
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Catalytic Method ◽  
Deposition Parameters ◽  
Film Roughness ◽  
Temperature And Pressure

AbstractGe-Sb-Te (GST) thin films were deposited by chemical vapor deposition (CVD) and hot-wire chemical vapor deposition (HW CVD). Several precursor sets (tetraethylgermanium - trimethylantimony - dimethyltellurium (TEGe-TMSb-DMTe), tetraisopropylgermanium - triisopropylantimony - di-tertiarybutyltellurium (TiPGe-TiPSb-DtBTe) and tetraallylgermanium - triisopropylantimony - diisopropyltellurium (TAGe-TiPSb-DiPTe)) were tested for CVD. For the TEGe-TMSb-DMTe precursor set tellurium and germanium could be detected in the films for all deposition temperatures investigated, while Sb was found only in the films deposited at elevated temperature higher than 550 °C. The deposition temperature could be reduced by using two other precursor sets (TiPGe-TiPSb-DtBTe and TAGe-TiPSb-DiPTe). The Ge content, however, could not be sufficiently increased to obtain stoichiometric Ge2Sb2Te5 films. Therefore, the hot wire or catalytic method was applied to improve the decomposition of the precursors. In this case, the desired composition (e.g. Ge2Sb2Te5) was obtained at each investigated temperature by adjusting dosing and deposition parameters. Additionally, film roughness (as low as 2 nm) and deposition rates could be optimized by adjusting deposition temperature and pressure.

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