Single-Crystalline β-Ga2O3 Hexagonal Nanodisks: Synthesis, Growth Mechanism, and Photocatalytic Activities

2009 ◽  
Vol 113 (52) ◽  
pp. 21548-21554 ◽  
Author(s):  
Heqing Yang ◽  
Ruyu Shi ◽  
Jie Yu ◽  
Ruini Liu ◽  
Ruigang Zhang ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Single Crystalline ◽  
Photocatalytic Activities

scholarly journals Correction to: Growth mechanism identification of sputtered single crystalline bismuth nanowire

2019 ◽  
Vol 9 (8) ◽  
pp. 2103-2103
Author(s):  
Haiyang Hong ◽  
Lu Zhang ◽  
Chunyu Yu ◽  
Ziqi Zhang ◽  
Cheng Li ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Single Crystalline ◽  
Bismuth Nanowire

Large-Scale Synthesis of In2O3 Nanowires and Their Characterization

2005 ◽  
Vol 475-479 ◽  
pp. 3513-3516 ◽  
Author(s):  
Fan Hao Zeng ◽  
X. Zhang
Keyword(s):  
Growth Mechanism ◽  
Large Scale ◽  
Single Crystalline ◽  
Pure Indium ◽  
Sem And Tem ◽  
Large Scale Synthesis

Large-scale single-crystalline In2O3 nanowires were successfully synthesized by simply evaporating the pure indium at 950ı. The as-synthesized products, characterized by XRD, SEM, and TEM, were pure, structurally uniform, and single crystalline with typical diameters of 10 to 100 nanometers and lengths of up to a few hundreds of micrometers. The growth mechanism of the nanowires also was discussed.

Hydrothermal synthesized Bi2WO6 nanoplates: growth mechanism and photocatalytic activities

2019 ◽  
Vol 6 (11) ◽  
pp. 1150g6 ◽  
Author(s):  
Liang Bao ◽  
Qinyu Bao ◽  
Tongshuai Huangfu ◽  
Yifan Chen ◽  
Tao Yang ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Photocatalytic Activities

Growth Mechanism and Structure of Ain Films Grown on Sapphire by MOCVD

1997 ◽  
Vol 482 ◽  
Author(s):  
Yun-Xin Li ◽  
L. Salamanca-Riba ◽  
K. Wongchotigul ◽  
P. Zhou ◽  
M. G. Spencer ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Columnar Structure ◽  
Crystalline Quality ◽  
Lateral Growth ◽  
Oriented Growth ◽  
Columnar Growth ◽  
Nucleation Layer ◽  
Single Crystalline ◽  
Maximum Value ◽  
Layer 2

AbstractAIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.

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