Effects of Irradiation on the Graphite Density of States Analyzed by Photoelectron Spectroscopy

2008 ◽  
Vol 112 (37) ◽  
pp. 14412-14416 ◽  
Author(s):  
Giorgio Speranza ◽  
Luca Minati
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Graphite Density ◽  
Effects Of Irradiation On

scholarly journals Probing LaMO3 Metal and Oxygen Partial Density of States Using X-ray Emission, Absorption, and Photoelectron Spectroscopy

2015 ◽  
Vol 119 (4) ◽  
pp. 2063-2072 ◽  
Author(s):  
Wesley T. Hong ◽  
Kelsey A. Stoerzinger ◽  
Brian Moritz ◽  
Thomas P. Devereaux ◽  
Wanli Yang ◽  
...  
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Partial Density ◽  
X Ray ◽  
Partial Density Of States

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

XPS, AES AND UPS INVESTIGATION OF SnO2/Si AND DFT-BASED THEORETICAL STUDY WITHIN THE mBJ-GGA SCHEME

2020 ◽  
pp. 2050048
Author(s):  
A. MOKADEM ◽  
M. BOUSLAMA ◽  
B. KHAROUBI ◽  
A. OUERDANE ◽  
R. KHENATA ◽  
...  
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Electronic Distribution ◽  
Complementary Techniques ◽  
Uv Photoelectron Spectroscopy ◽  
Theoretical Results

We investigate the growth performance of tin oxide on the Si substrate, achieved by spray pyrolysis using the sensitive analysis techniques X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). These complementary techniques confirm the growth of homogeneous SnO2 thin films. We also study the electronic distribution of the valence band of SnO2 theoretically using density functional theory (DFT). The chemical and physical properties of the material depend on the electron structure varying as a function of energy. The density of states (DOS) is calculated using the modified Becke–Johnson-Generalized Gradient Approximation (mBJ-GGA) in order to identify the electronic orbitals and the importance of their contribution to the electronic structure of the valence band. Furthermore, we use the experimental technique UV Photoelectron Spectroscopy (UPS) for studying the electronic distribution within the valence band and for validating the theoretical results of the density of states of SnO2/Si.

Element-specific density of states of Co2MnGe revealed by resonant photoelectron spectroscopy

2019 ◽  
Vol 100 (16) ◽  
Author(s):  
Takashi Kono ◽  
Masaaki Kakoki ◽  
Tomoki Yoshikawa ◽  
Xiaoxiao Wang ◽  
Kazuki Sumida ◽  
...  
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Specific Density

Density of states of ReO3 by X-ray photoelectron spectroscopy

1972 ◽  
Vol 39 (5) ◽  
pp. 387-388 ◽  
Author(s):  
R.V. Kasowski ◽  
W.M. Riggs
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
X Ray

Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films

2010 ◽  
Vol 297-301 ◽  
pp. 849-852
Author(s):  
Toshio Takeuchi ◽  
Jiro Nishinaga ◽  
Atsushi Kawaharazuka ◽  
Yoshiji Horikoshi
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Gallium Oxide ◽  
Silicon Oxide ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Analytical Technique ◽  
Sapphire Substrates ◽  
Atomic Contribution

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

The Density of States of 3d-Electron Band in Pseudobinary Alloys CoTi1-xAlxby Photoelectron Spectroscopy Using Synchrotron Radiation

1986 ◽  
Vol 55 (1) ◽  
pp. 263-267 ◽  
Author(s):  
Keizo Endo ◽  
Akira Shinogi ◽  
Kouichi Ishiyama ◽  
Takaaki Hanyu ◽  
Hiroyoshi Ishii ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Electron Band ◽  
3D Electron

PHOTOELECTRONIC INVESTIGATION OF Pd ELECTRON STRUCTURE TRANSFORMATION AT OXYGEN ADSORPTION

2005 ◽  
Vol 12 (05n06) ◽  
pp. 713-719 ◽  
Author(s):  
V. P. BELASH ◽  
I. N. KLIMOVA ◽  
Yu. S. MITROKHIN
Keyword(s):  
Experimental Data ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Oxygen Adsorption ◽  
Spectroscopy Method ◽  
Surface Compound ◽  
Structure Transformation ◽  
Electronic Mechanism ◽  
Wide Range ◽  
Polycrystalline Palladium

Oxygen adsorption on the surface of polycrystalline palladium has been studied by the photoelectron spectroscopy method in a wide range of oxygen exposure and temperatures, starting with the earliest stages of adsorption to the formation of the surface compound of PdO -type. Based on the analysis of the experimental data and the calculation of the density of states carried out by the TB-LMTO-ASA method, the attempt to elucidate the electronic mechanism of adsorption and oxidation power of palladium was made.

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