Density of states of the tetragonal-phase germanium nanocrystals using x-ray photoelectron spectroscopy

1998 ◽  
Vol 72 (19) ◽  
pp. 2460-2462 ◽  
Author(s):  
S. Sato ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Tetragonal Phase ◽  
X Ray ◽  
Germanium Nanocrystals

scholarly journals Probing LaMO3 Metal and Oxygen Partial Density of States Using X-ray Emission, Absorption, and Photoelectron Spectroscopy

2015 ◽  
Vol 119 (4) ◽  
pp. 2063-2072 ◽  
Author(s):  
Wesley T. Hong ◽  
Kelsey A. Stoerzinger ◽  
Brian Moritz ◽  
Thomas P. Devereaux ◽  
Wanli Yang ◽  
...  
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Partial Density ◽  
X Ray ◽  
Partial Density Of States

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Density of states of ReO3 by X-ray photoelectron spectroscopy

1972 ◽  
Vol 39 (5) ◽  
pp. 387-388 ◽  
Author(s):  
R.V. Kasowski ◽  
W.M. Riggs
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
X Ray

Atomic Contribution to Valence Band Density of States in Gallium Oxide and Silicon Oxide Nano Layered Films

2010 ◽  
Vol 297-301 ◽  
pp. 849-852
Author(s):  
Toshio Takeuchi ◽  
Jiro Nishinaga ◽  
Atsushi Kawaharazuka ◽  
Yoshiji Horikoshi
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Gallium Oxide ◽  
Silicon Oxide ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Analytical Technique ◽  
Sapphire Substrates ◽  
Atomic Contribution

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

Valence band density of states and X-ray photoelectron spectrum of GaS

1978 ◽  
Vol 56 (6) ◽  
pp. 700-703 ◽  
Author(s):  
A. Balzarotti ◽  
R. Girlanda ◽  
V. Grasso ◽  
E. Doni ◽  
F. Antonangeli ◽  
...  
Keyword(s):  
Fine Structure ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Photoelectron Spectrum ◽  
Tight Binding ◽  
Single Layer ◽  
Two Dimensional ◽  
X Ray ◽  
Dimensional Approximation

The valence band density of states of GaS has been investigated by X-ray photoelectron spectroscopy and the spectrum has been interpreted on the basis of a single layer tight-binding calculation. Our two-dimensional approximation seems largely appropriate to reproduce the main experimental features of the valence band density of states of GaS, as previously found in the case of InSe. It can also explain to some extent the fine structure in the ultraviolet photoemission spectra recently measured with the synchroton radiation.

Hydrothermal Synthesis of Tetragonal Phase CuInS2 Nanoparticles

2012 ◽  
Vol 557-559 ◽  
pp. 489-492
Author(s):  
Zhi Xin Chen ◽  
Ya Zhen Ye ◽  
Han Jie Huang ◽  
Guang Can Xiao ◽  
Yun Hui He
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Hydrothermal Synthesis ◽  
Photoelectron Spectroscopy ◽  
Tetragonal Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

The tetragonal phase CuInS2 nanoparticles were synthesized by the reaction of Cu(Ac)2, InCl3·4H2O and thioacetamide by hydrothermal method at 200 °C for 6 h in pH 1. The products were characterized by X-ray diffraction, energy-dispersive X-ray spectrum, X-ray photoelectron spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. Experimental results indicate that reaction temperature and the pH of solution are the important factors in the formation of CuInS2. The SEM and TEM results illuminated that the CuInS2 was composed of so many nanoparticles.

Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

1995 ◽  
Vol 386 ◽  
Author(s):  
J. L. Alay ◽  
M. Fukuda ◽  
C. H. Bjorkman ◽  
K. Nakagawa ◽  
S. Sasaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Core Level ◽  
Band Alignment ◽  
X Ray ◽  
Charging Effect

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

Solvothermal Preparation and Thermal Phase Change Behaviors of Nanosized Tetragonal-Phase Silver Selenide (Ag2Se)

2013 ◽  
Vol 850-851 ◽  
pp. 128-131 ◽  
Author(s):  
Jun Li Wang ◽  
Hui Feng ◽  
Wei Ling Fan
Keyword(s):  
Transition Temperature ◽  
Phase Change ◽  
Photoelectron Spectroscopy ◽  
Tetragonal Phase ◽  
Room Temperature ◽  
Variable Temperature ◽  
Cubic Phase ◽  
Silver Selenide ◽  
X Ray ◽  
Change Behaviors

Nanocrystalline silver selenide (Ag2Se) with an average diameter of 100 nm were prepared by a facile solvothermal method. X-ray energy dispersive (EDS) spectroscopy and X-ray photoelectron spectroscopy (XPS) studies confirmed that the products were pure Ag2Se. Room-temperature powder X-ray diffraction (XRD) measurements indicated that the as-prepared Ag2Se nanocrystals exhibit a metastable tetragonal polymorphic phase, rather than the common orthorhombic phase at room temperature. The variable-temperature XRD and differential scanning calorimetry (DSC) thermal analysis techniques were used to investigate the phase change behaviors of the tetragonal Ag2Se nanocrystals, and the results showed that the low-temperature tetragonal phase transforms to the high-temperature cubic phase at about 106 °C. This transition temperature is lower by ~30 °C than the orthorhombic-cubic transition temperature (133140 °C) previously reported for Ag2Se. Meanwhile, two exothermic peaks, loaded at 61 and 89 °C, respectively, were detected in the cooling DSC scan for the cubic to tetragonal phase transition, and the reason was discussed.

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