The Density of States of 3d-Electron Band in Pseudobinary Alloys CoTi1-xAlxby Photoelectron Spectroscopy Using Synchrotron Radiation

1986 ◽  
Vol 55 (1) ◽  
pp. 263-267 ◽  
Author(s):  
Keizo Endo ◽  
Akira Shinogi ◽  
Kouichi Ishiyama ◽  
Takaaki Hanyu ◽  
Hiroyoshi Ishii ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Electron Band ◽  
3D Electron

scholarly journals Probing LaMO3 Metal and Oxygen Partial Density of States Using X-ray Emission, Absorption, and Photoelectron Spectroscopy

2015 ◽  
Vol 119 (4) ◽  
pp. 2063-2072 ◽  
Author(s):  
Wesley T. Hong ◽  
Kelsey A. Stoerzinger ◽  
Brian Moritz ◽  
Thomas P. Devereaux ◽  
Wanli Yang ◽  
...  
Keyword(s):  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Partial Density ◽  
X Ray ◽  
Partial Density Of States

Photoelectron spectroscopy of reactive intermediates using synchrotron radiation

2000 ◽  
Vol 108 (1-3) ◽  
pp. 47-61 ◽  
Author(s):  
J.D Barr ◽  
L Beeching ◽  
A De Fanis ◽  
J.M Dyke ◽  
S.D Gamblin ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Reactive Intermediates

Photoelectron spectroscopy of size-selected cluster ions using synchrotron radiation

2014 ◽  
Vol 115 (3) ◽  
pp. 771-779 ◽  
Author(s):  
Thomas Schramm ◽  
Gerd Ganteför ◽  
Andras Bodi ◽  
Partick Hemberger ◽  
Thomas Gerber ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Cluster Ions

Study of the Photodissociation Process of ClC(O)SCH3Using both Synchrotron Radiation and HeI Photoelectron Spectroscopy in the Valence Region

2010 ◽  
Vol 114 (31) ◽  
pp. 8049-8055 ◽  
Author(s):  
Mariana Geronés ◽  
Mauricio F. Erben ◽  
Maofa Ge ◽  
Reinaldo L. Cavasso Filho ◽  
Rosana M. Romano ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Valence Region

Unraveling Internal Structures of Highly Luminescent PbSe Nanocrystallites Using Variable-Energy Synchrotron Radiation Photoelectron Spectroscopy

2006 ◽  
Vol 110 (31) ◽  
pp. 15244-15250 ◽  
Author(s):  
Sameer Sapra ◽  
J. Nanda ◽  
Jeffrey M. Pietryga ◽  
Jennifer A. Hollingsworth ◽  
D. D. Sarma
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Internal Structures ◽  
Variable Energy

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Theoretical study of modified electron band dispersion and density of states due to high frequency phonons in graphene-on-substrates

2018 ◽  
Vol 07 (04) ◽  
pp. 1850024
Author(s):  
Sivabrata Sahu ◽  
G. C. Rout
Keyword(s):  
Band Gap ◽  
Density Of States ◽  
High Frequency ◽  
Vibrational Energy ◽  
Harmonic Approximation ◽  
Coulomb Energy ◽  
Electron Band ◽  
Band Dispersion ◽  
Energy Formula ◽  
Sublattice Site

We propose here a theoretical model for the study of band gap opening in graphene-on- polarizable substrate taking the effect of electron–electron and electron–phonon (EP) interactions at high frequency phonon vibrations. The Hamiltonian consists of hopping of electrons upto third nearest- neighbors and the effect substrate, where A sublattice site is raised by energy [Formula: see text] and B sublattice site is suppressed by energy [Formula: see text], hence producing a band gap energy of [Formula: see text]. Further, we have considered Hubbard type electron–electron repulsive interactions at A and B sublattices, which are considered within Hartree–Fock meanfield approximation. The electrons in the graphene plane interact with the phonon’s present in the polarized substrate in the presence of phonon vibrational energy within harmonic approximation. The temperature-dependent electron occupancies are computed numerically and self-consistently for both spins at both the sublattice sites. By using these electron occupancies, we have calculated the electron band dispersion and density of states (DOS), which are studied for the effects of EP interaction, high phonon frequency, Coulomb energy and substrate induced gap.

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