Electric Field inside a Hole-Only Device and Insights into Space-Charge-Limited Current Measurement for Organic Semiconductors

2014 ◽  
Vol 118 (19) ◽  
pp. 9990-9995 ◽  
Author(s):  
Haoyuan Li ◽  
Lian Duan ◽  
Deqiang Zhang ◽  
Yong Qiu
Keyword(s):  
Electric Field ◽  
Space Charge ◽  
Organic Semiconductors ◽  
Current Measurement ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Modeling the transition from ohmic to space charge limited current in organic semiconductors

2012 ◽  
Vol 13 (9) ◽  
pp. 1700-1709 ◽  
Author(s):  
P. López Varo ◽  
J.A. Jiménez Tejada ◽  
J.A. López Villanueva ◽  
J.E. Carceller ◽  
M.J. Deen
Keyword(s):  
Space Charge ◽  
Organic Semiconductors ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

scholarly journals Эффект электроформовки в поликристаллических пленках фуллерена С-=SUB=-60-=/SUB=-

2019 ◽  
Vol 45 (4) ◽  
pp. 21
Author(s):  
И.Б. Захарова ◽  
Д.И. Долженко ◽  
В.Ф. Бородзюля ◽  
Н.Т. Сударь
Keyword(s):  
Electric Field ◽  
Space Charge ◽  
Reproducibility Of Results ◽  
Constant Electric Field ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Carrier Traps ◽  
High Degree ◽  
Space Charge Limited

AbstractLong-term exposure of a polycrystalline fullerene C_60 film in a constant electric field of 1–4 MV/cm produces an electroforming effect manifested by increase in conductivity of the film within several orders of magnitude. After this electroforming, the current–voltage ( I – U ) characteristic shows a high degree of current stability and reproducibility of results. In fields of 10^5–10^6 V/cm, the I – U characteristics of electroformed films are determined by the space-charge limited current. The concentration ( N _ t ≈ 4 × 10^21 m^–3) of carrier traps and their energy ( E _ t ≈ 0.176 eV) have been estimated.

scholarly journals Influence of diffusion on space-charge-limited current measurements in organic semiconductors

2013 ◽  
Vol 4 ◽  
pp. 180-188 ◽  
Author(s):  
Thomas Kirchartz
Keyword(s):  
Space Charge ◽  
Numerical Simulations ◽  
Organic Semiconductors ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Charged Defects ◽  
Space Charge Limited

Numerical simulations of current–voltage curves in electron-only devices are used to discuss the influence of charged defects on the information derived from fitting space-charge-limited current models to the data. Charged, acceptor-like defects lead to barriers impeding the flow of electrons in electron-only devices and therefore lead to a reduced current that is similar to the situation where the device has a built-in voltage. This reduced current will lead to an underestimation of the mobilities and an overestimation of characteristic tail slopes if analytical equations are used to analyze the data. Correcting for the barrier created by the charged defects can, however, be a successful way to still be able to obtain reasonably accurate mobility values.

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