Relationship between Mobilities from Time-of-Flight and Dark-Injection Space-Charge-Limited Current Measurements for Organic Semiconductors: A Monte Carlo Study

2014 ◽  
Vol 118 (12) ◽  
pp. 6052-6058 ◽  
Author(s):  
Haoyuan Li ◽  
Lian Duan ◽  
Deqiang Zhang ◽  
Guifang Dong ◽  
Juan Qiao ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Space Charge ◽  
Organic Semiconductors ◽  
Time Of Flight ◽  
Monte Carlo Study ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Modeling the transition from ohmic to space charge limited current in organic semiconductors

2012 ◽  
Vol 13 (9) ◽  
pp. 1700-1709 ◽  
Author(s):  
P. López Varo ◽  
J.A. Jiménez Tejada ◽  
J.A. López Villanueva ◽  
J.E. Carceller ◽  
M.J. Deen
Keyword(s):  
Space Charge ◽  
Organic Semiconductors ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

scholarly journals Influence of diffusion on space-charge-limited current measurements in organic semiconductors

2013 ◽  
Vol 4 ◽  
pp. 180-188 ◽  
Author(s):  
Thomas Kirchartz
Keyword(s):  
Space Charge ◽  
Numerical Simulations ◽  
Organic Semiconductors ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Charged Defects ◽  
Space Charge Limited

Numerical simulations of current–voltage curves in electron-only devices are used to discuss the influence of charged defects on the information derived from fitting space-charge-limited current models to the data. Charged, acceptor-like defects lead to barriers impeding the flow of electrons in electron-only devices and therefore lead to a reduced current that is similar to the situation where the device has a built-in voltage. This reduced current will lead to an underestimation of the mobilities and an overestimation of characteristic tail slopes if analytical equations are used to analyze the data. Correcting for the barrier created by the charged defects can, however, be a successful way to still be able to obtain reasonably accurate mobility values.

Analysis of charge transport in high-mobility diketopyrrolopyrole polymers by space charge limited current and time of flight methods

RSC Advances ◽  
2014 ◽  
Vol 4 (67) ◽  
pp. 35344 ◽  
Author(s):  
Kwang Hee Cheon ◽  
Jangwhan Cho ◽  
Byung Tack Lim ◽  
Hui-Jun Yun ◽  
Soon-Ki Kwon ◽  
...  
Keyword(s):  
Space Charge ◽  
Charge Transport ◽  
Time Of Flight ◽  
High Mobility ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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