Numerical analysis of space-charge limited current with consideration of diffusion and electric field at electrode

1980 ◽  
Vol 100 (3) ◽  
pp. 25-31
Author(s):  
Mitsumasa Iwamoto ◽  
Taro Hino
Keyword(s):  
Numerical Analysis ◽  
Electric Field ◽  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

scholarly journals Эффект электроформовки в поликристаллических пленках фуллерена С-=SUB=-60-=/SUB=-

2019 ◽  
Vol 45 (4) ◽  
pp. 21
Author(s):  
И.Б. Захарова ◽  
Д.И. Долженко ◽  
В.Ф. Бородзюля ◽  
Н.Т. Сударь
Keyword(s):  
Electric Field ◽  
Space Charge ◽  
Reproducibility Of Results ◽  
Constant Electric Field ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Carrier Traps ◽  
High Degree ◽  
Space Charge Limited

AbstractLong-term exposure of a polycrystalline fullerene C_60 film in a constant electric field of 1–4 MV/cm produces an electroforming effect manifested by increase in conductivity of the film within several orders of magnitude. After this electroforming, the current–voltage ( I – U ) characteristic shows a high degree of current stability and reproducibility of results. In fields of 10^5–10^6 V/cm, the I – U characteristics of electroformed films are determined by the space-charge limited current. The concentration ( N _ t ≈ 4 × 10^21 m^–3) of carrier traps and their energy ( E _ t ≈ 0.176 eV) have been estimated.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

Sign in / Sign up

Export Citation Format

Share Document