Conformational Compression and Barrier Height Heterogeneity in theN-Acetylglutamate Kinase

2013 ◽  
Vol 117 (46) ◽  
pp. 14261-14272 ◽  
Author(s):  
Melchor Sanchez-Martinez ◽  
Enrique Marcos ◽  
Romà Tauler ◽  
Martin Field ◽  
Ramon Crehuet
Keyword(s):  
Barrier Height ◽  
Acetylglutamate Kinase

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Measurement of the barrier height of a multiple quantum barrier (MQB)

1994 ◽  
Vol 30 (12) ◽  
pp. 2781-2789 ◽  
Author(s):  
J. Rennie ◽  
M. Okajima ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Barrier Height ◽  
Multiple Quantum

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

scholarly journals Structural Parameters and Internal Rotational Barriers of tert-Butylammonium Ion: AM1 and ab initio Calculations

1992 ◽  
Vol 47 (12) ◽  
pp. 1255-1256
Author(s):  
Hiroyuki Ishida ◽  
Yoshihiro Kubozono ◽  
Setsuo Kashino ◽  
Ryuichi Ikeda
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
Internal Rotation ◽  
Barrier Height ◽  
Structural Parameters ◽  
Mo Calculations ◽  
Ab Initio Mo Calculations ◽  
Rotational Barriers ◽  
Ab Initio Mo ◽  
Internal Rotational Barriers

Semiempirical and ab initio MO calculations were performed to estimate the structural parameters of tert-butylammonium ion and its potential energies for the internal rotation of the CH3 and NH3+ groups. The barrier height for the rotation of NH3+ was found to be lower than for that of CH3 , corresponding to the C - N bond being longer than the C - C bond.

The potential barrier height for a Jahn-Teller center

2004 ◽  
Vol 99 (1) ◽  
pp. 189-196 ◽  
Author(s):  
V. N. Vasyukov ◽  
A. D. Prokhorov ◽  
V. P. D’yakonov ◽  
H. Szymczak
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height ◽  
Jahn Teller

Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM

2021 ◽  
Vol 237 ◽  
pp. 111498
Author(s):  
Tae-Hyeon Kim ◽  
Sungjun Kim ◽  
Byung-Gook Park
Keyword(s):  
Barrier Height ◽  
Energy Barrier
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