Insights into the Surface Chemistry of Tin Oxide Atomic Layer Deposition from Quantum Chemical Calculations

2013 ◽  
Vol 117 (37) ◽  
pp. 19056-19062 ◽  
Author(s):  
Jukka T. Tanskanen ◽  
Stacey F. Bent
2010 ◽  
Vol 114 (39) ◽  
pp. 16618-16624 ◽  
Author(s):  
Jukka T. Tanskanen ◽  
Jonathan R. Bakke ◽  
Stacey F. Bent ◽  
Tapani A. Pakkanen

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 12226-12226 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  

Author(s):  
Zhuocheng Zhang ◽  
Yaoqiao Hu ◽  
Zehao Lin ◽  
Mengwei Si ◽  
Adam Charnas ◽  
...  

2019 ◽  
Vol 35 (7) ◽  
pp. 720-731 ◽  
Author(s):  
Jonathan Guerrero-Sánchez ◽  
Bo Chen ◽  
Noboru Takeuchi ◽  
Francisco Zaera

Abstract


2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).


2020 ◽  
Vol 8 (18) ◽  
pp. 9292-9301
Author(s):  
Ivan A. Moreno-Hernandez ◽  
Sisir Yalamanchili ◽  
Harold J. Fu ◽  
Harry A. Atwater ◽  
Bruce S. Brunschwig ◽  
...  

A protective tin oxide layer formed by atomic-layer deposition limits surface recombination at n-Si surfaces and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The layer conformally coats structures such as Si microcone arrays.


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