Study of Growth Mechanism and Properties of Zinc Indium Sulfide Thin Films Deposited by Atomic Layer Chemical Vapor Deposition over the Entire Range of Composition

2011 ◽  
Vol 115 (34) ◽  
pp. 17197-17205 ◽  
Author(s):  
Pascal Genevée ◽  
Frédérique Donsanti ◽  
Gilles Renou ◽  
Daniel Lincot
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Entire Range ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Indium Sulfide

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

Atomic Layer Deposition of Solid Lubricant Thin Films

2005 ◽  
Author(s):  
T. W. Scharf ◽  
S. V. Prasad ◽  
M. T. Dugger ◽  
T. M. Mayer
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Aspect Ratios ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Tungsten disulphide (WS2) and molybdenum disulfide (MoS2), which belong to the family of transition metal dichalcogenides, are well known for their solid lubricating behavior. Thin films of MoS2 and WS2 exhibit extremely low coefficient of friction (COF ∼0.02 to 0.05) in dry environments, and are typically applied by sputter deposition, pulsed laser ablation, evaporation or chemical vapor deposition, which are essentially either line-of-sight or high temperature processes. With these techniques it is difficult to coat surfaces shadowed from the target, or uniformly coat sidewalls of three-dimensional or high aspect ratio structures. For applications such as micromechanical (MEMS) devices, where dimensions and separation tolerances are small, and aspect ratios are large, these traditional deposition techniques are inadequate. Atomic layer deposition (ALD) is a chemical vapor deposition technique that could overcome many of these problems by using sequential introduction of gaseous precursors and selective surface chemistry to achieve controlled growth at lower temperatures, but the chemistry needed to grow transition metal dichalcogenide films by ALD is not known.

Atomic-Layer Chemical-Vapor-Deposition of TiN Thin Films on Si(100) and Si(111)

2000 ◽  
Vol 37 (6) ◽  
pp. 1045 ◽  
Author(s):  
Kim Young-Seok ◽  
Jeon Hyeongtag ◽  
Kim Young Do ◽  
Kim Won Mok
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Tin Thin Films
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