Effect of Laser Wavelength at IR (1064 nm) and UV (193 nm) on the Structural Formation of Palladium Nanoparticles in Deionized Water

2011 ◽  
Vol 115 (12) ◽  
pp. 5049-5057 ◽  
Author(s):  
Seyedeh Zahra Mortazavi ◽  
Parviz Parvin ◽  
Ali Reyhani ◽  
Ahmad Nozad Golikand ◽  
Soghra Mirershadi
Keyword(s):  
Palladium Nanoparticles ◽  
Laser Wavelength ◽  
Deionized Water ◽  
Structural Formation ◽  
193 Nm

Spectrochemical Analysis of Liquids Using Laser-Induced Plasma Emissions: Effects of Laser Wavelength

1997 ◽  
Vol 51 (1) ◽  
pp. 87-91 ◽  
Author(s):  
W. F. Ho ◽  
C. W. Ng ◽  
N. H. Cheung
Keyword(s):  
Laser Pulse ◽  
Signal To Noise Ratio ◽  
Laser Wavelength ◽  
Spectrochemical Analysis ◽  
Liquid Jets ◽  
Single Shot ◽  
Transient Nature ◽  
Vapor Plume ◽  
193 Nm ◽  
532 Nm

The plasma plume emissions produced by pulsed (∼ 10 ns) laser ablation of liquid jets were monitored for spectrochemical analysis. Laser wavelengths at 532 and 193 nm were used, and sodium was the test analyte. As expected, the 532-nm laser pulse produced very intense plasma continuum emissions that masked the sodium signal for the first hundred nanoseconds, especially near the bright core of the vapor plume. Neither time-gating nor spatial masking could significantly improve the single-shot signal-to-noise ratio, since the transient nature of the emissions placed stringent demands on timing precision while the small size of the plume required accurate mask positioning—both antithetical to the inherent instability of jet ablation. In sharp contrast, the 193-nm laser pulse produced relatively dim plasma flash but intense sodium emissions, rendering it ideal for analytical applications.

Control of structures of deposited polymer films by ablation laser wavelength: Polyacrylonitrile at 308, 248, and 193 nm

1996 ◽  
Vol 79 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Satoru Nishio ◽  
Tomonori Chiba ◽  
Akiyoshi Matsuzaki ◽  
Hiroyasu Sato
Keyword(s):  
Polymer Films ◽  
Laser Wavelength ◽  
Ablation Laser ◽  
193 Nm

TiN Hard Mask Cleans with SC1 Solutions, for 64nm Pitch BEOL Patterning

2014 ◽  
Vol 219 ◽  
pp. 209-212 ◽  
Author(s):  
Lucile Broussous ◽  
D. Krejcirova ◽  
K. Courouble ◽  
S. Zoll ◽  
A. Iwasaki ◽  
...  
Keyword(s):  
Hydrofluoric Acid ◽  
Deionized Water ◽  
Integration Scheme ◽  
Single Exposure ◽  
Hard Mask ◽  
Immersion Lithography ◽  
Metal Levels ◽  
Removal Processes ◽  
193 Nm ◽  
28 Nm

Titanium Nitride metal hard mask was first introduced for BEOL patterning at 65 nm [1] and 45 nm nodes [2]. Indeed, in this “Trench First Hard Mask” (TFHM) backend architecture, the dual hard mask stack (SiO2 & TiN) allows a minimized exposure of ULK materials to damaging plasma chemistries, both for line/via etch sequence, and lithography reworks operations. This integration scheme was successfully used for a BEOL pitch down to 90 nm for the 28 nm node, however, for the 14 nm technology node, 64 nm BEOL minimum pitch is required for the first metal levels. Because it is unable to resolve features below 80 nm pitch in a single exposure, conventional 193 nm immersion lithography must be associated with dual patterning schemes, so called Lithography-Etch-Lithography-Etch (LELE) patterning [3] for line levels and self-aligned via (SAV) process [4] for via patterning. In both cases, 2 lithography/etch/clean sequences are necessary to obtain one desired pattern, and associated reworks also become more challenging since first pattern is exposed to resist removal processes (plasma + wet clean). The reference wet cleans that were developed for 65 to 28 nm TiN hardmask patterning, utilizes commonly used chemistry for BEOL post-etch cleans, i.e. diluted hydrofluoric acid (dHF) followed by deionized water Nanospray (DIWNS) on 300 mm single wafer tool.

Pulsed Laser Deposition of Si Nanocluster Films

1995 ◽  
Vol 397 ◽  
Author(s):  
W. Marine ◽  
I. Movtchan ◽  
A. Simakine ◽  
L. Patrone ◽  
R. Dreyfus ◽  
...  
Keyword(s):  
Plasma Plume ◽  
Temporal Evolution ◽  
Film Formation ◽  
Laser Wavelength ◽  
Inert Gases ◽  
Preparation Conditions ◽  
Spatio Temporal ◽  
Optical Time ◽  
193 Nm ◽  
Average Cluster

ABSTRACTReactive laser ablation of Si targets by ArF* excimer laser (wavelength 193 nm, pulse width 15 ns (FWHM)) was performed in He, Ar or O2 0.05-1 Torr atmospheres and led to Si-SiOx nanocluster thin film formation within laser-induced plasma plume. Optical spectroscopy and optical Time-of-Flight (TOF) measurements were carried out during ablation-deposition experiments. A number of large weak emission bands in blue and green-yellow spectral branches were observed both in inert gases and in oxygen ambient atmospheres and attributed to the emission from excited nanoparticles in the plasma plume. TOF measurements proved a different spatio-temporal evolution of this emission compare to the emission of monoatomic particles. The films exhibit photoluminescence bands in the UV region (around 290 nm and between 310-370 nm), in the blue (between 420 and 500 nm), and in the green-yellow (at 520-560 nm). The relative intensities of the luminescence bands depend on the average cluster size, which is determined by preparation conditions (nature and pressure of the ambient gas, laser fluence).

Spectrochemical Analysis of Liquids Using Laser-Induced Plasma Emissions: Effects of Laser Wavelength on Plasma Properties

1997 ◽  
Vol 51 (7) ◽  
pp. 976-983 ◽  
Author(s):  
C. W. Ng ◽  
W. F. Ho ◽  
N. H. Cheung
Keyword(s):  
Laser Ablation ◽  
Electron Density ◽  
Laser Wavelength ◽  
Plasma Properties ◽  
Sodium Potassium ◽  
Thermally Induced ◽  
Plasma Plumes ◽  
Plume Temperature ◽  
193 Nm ◽  
532 Nm

We spectroscopically determined the temperature and electron density of the plasma plumes produced by pulsed-laser ablation of aqueous solutions containing sodium, lithium, and rubidium. With the use of a Nd:YAG laser at 532 nm and fluence of 3 J/cm2, the plasma produced was hot (low eV range) and extensively ionized, with electron density in the 1018 cm−3 range. Analyte line signals were initially masked by intense plasma continuum emissions and would only emerge briefly above the background when the plume temperature dropped below 1 eV during the course of its very rapid cooling. Since ionization was thermally induced, the intense plasma flash was inevitable. In contrast, 193-nm laser ablation at similar fluence generated plasmas of much lower (<1 eV) temperature but comparable electron density. Plasma continuum emissions were relatively weak, and the signal-to-background ratio was a thousand times better. Consequently, this “cold” plasma was ideal for sampling biologically important elements such as sodium, potassium, and calcium.

Surface Modification of Aluminum Nitride and of Aluminum by Excimer Laser

1992 ◽  
Vol 285 ◽  
Author(s):  
A.J. Pedraza ◽  
J.-Y. Zhang ◽  
H. Esrom
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Ablation Rate ◽  
Laser Wavelength ◽  
Mechanism Of Decomposition ◽  
Self Consistent ◽  
A New Technique ◽  
193 Nm ◽  
Evaporation Kinetics

ABSTRACTA new technique for selective metallization of aluminum nitride (AIN) has been previously reported (1). It involves the use of an excimer laser to activate the AIN surface followed by electroless plating (Cu,Ni,Au) of the irradiated areas. The mechanism of decomposition of ALN is accompanied by ablation and the formation of an Al film on the substrate surface. Ablation rates are reported here as a function of fluence and number of pulses for three different wavelengths λ = 193 nm (ArF), λ = 248 (KrF) and λ = 351 nm (XeF).The effect of laser wavelength on the ablation rate is discussed. The ablation rates for Al were zlso measured and are compared with the AIN ablation rates. A numerical thermal model is used to analyze the mechanisms of laser ablation of both materials. The evaporation kinetics are incorporated into the model. The Clausius-Clapeyron approximation is used to make a self-consistent calculation of boiling and decomposition temperatures.

Excimer Laser Assisted Deposition of GaAs, AlAs, and [Al.Ga]as from Lewis Acid-Base Adducts

1986 ◽  
Vol 75 ◽  
Author(s):  
J. J. Zinck ◽  
P. D. Brewer ◽  
J. E. Jensen ◽  
G. L. Olson ◽  
L. W. Tutt
Keyword(s):  
Thin Films ◽  
Laser Beam ◽  
Substrate Temperature ◽  
Lewis Acid ◽  
Laser Fluence ◽  
Laser Wavelength ◽  
Acid Base ◽  
193 Nm ◽  
Source Materials ◽  
Reactive Gas

AbstractLaser-assisted deposition of GaAs, AlAs and [AIGa]As thin films on Ge(100) substrates from trimethylgallium-trimethylarsenic and trimethylaluminumtrimethylarsenic Lewis acid-base adduct source materials is reported. A parametric study has been performed in which reactive gas pressure, substrate temperature, laser fluence, laser wavelength (248 nm or 193 nm). and orientation of the laser beam with respect to the substrate have been varied. In the case of irradiation parallel to the substrate, stoichiometric films of GaAs and [AIGa]As have been obtained. The data suggest that for irradiation perpendicular to the substrate a competition exists between desorption and photodeposition, which adversely affects film stoichiometry under the conditions studied.

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