Excimer Laser Assisted Deposition of GaAs, AlAs, and [Al.Ga]as from Lewis Acid-Base Adducts

1986 ◽  
Vol 75 ◽  
Author(s):  
J. J. Zinck ◽  
P. D. Brewer ◽  
J. E. Jensen ◽  
G. L. Olson ◽  
L. W. Tutt
Keyword(s):  
Thin Films ◽  
Laser Beam ◽  
Substrate Temperature ◽  
Lewis Acid ◽  
Laser Fluence ◽  
Laser Wavelength ◽  
Acid Base ◽  
193 Nm ◽  
Source Materials ◽  
Reactive Gas

AbstractLaser-assisted deposition of GaAs, AlAs and [AIGa]As thin films on Ge(100) substrates from trimethylgallium-trimethylarsenic and trimethylaluminumtrimethylarsenic Lewis acid-base adduct source materials is reported. A parametric study has been performed in which reactive gas pressure, substrate temperature, laser fluence, laser wavelength (248 nm or 193 nm). and orientation of the laser beam with respect to the substrate have been varied. In the case of irradiation parallel to the substrate, stoichiometric films of GaAs and [AIGa]As have been obtained. The data suggest that for irradiation perpendicular to the substrate a competition exists between desorption and photodeposition, which adversely affects film stoichiometry under the conditions studied.

The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

1999 ◽  
Vol 8 (2-5) ◽  
pp. 463-467 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Hajime Aoki ◽  
Koji Suizu ◽  
Koji Takahashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Carbon Thin Films

THE APPLICATION OF PULSED LASER DEPOSITION IN PRODUCING BIOACTIVE CERAMIC FILMS

2005 ◽  
Vol 12 (03) ◽  
pp. 401-408 ◽  
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
DIANGANG WANG
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Future Application ◽  
Ceramic Films ◽  
Bioactive Ceramic

Pulsed laser deposition (PLD) is a relatively new technique for producing thin films. It presents unique advantages for the deposition of bioactive ceramics. The mechanism and characteristics of the technique PLD are introduced. Its applications and current research status in hydroxyapatite and bioglass thin films are reviewed. The effect of processing parameters of PLD, including atmosphere, substrate temperature, laser wavelength and target properties, on the structures and the properties of the hydroxyapatite film, is analyzed in detail. Future application trends are also analyzed.

Effects of Deposition Parameters on the Structure, Morphology and Chemical Composition of PLZT Thin Films

1994 ◽  
Vol 341 ◽  
Author(s):  
R. M. Ribeiro ◽  
M. J. M. Gomes ◽  
E. De Matos Gomes ◽  
J. A. Ferreira ◽  
P. L. Q. Mantas ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Substrate Temperature ◽  
Laser Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Structure Morphology ◽  
Plzt Thin Films

AbstractPLZT thin films from a stoichiometric (9/65/35) commercial target were laser deposited using the second and third harmonics of a nanosecond Nd:YAG laser. The films were grown on oriented sapphire substrates and analysed by X-ray diffraction, SEM and EDX techniques. The influence of the deposition parameters laser fluence and substrate temperature on the physical characteristics of the films is presented.

scholarly journals Epitaxial Growth of Metal Fluoride Thin Films by Pulsed-Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
D. P. Norton ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
D. B. Geohegan ◽  
A. Puretzky
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Emission Spectra ◽  
Optical Emission ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Metal Fluoride ◽  
Ablation Process ◽  
193 Nm

ABSTRACTWe have investigated the growth of GdLiF4 thin films for optical waveguide applications using pulsed-laser deposition (PLD). Epitaxial, c-axis oriented GdLiF4 films have been grown from undoped GdLiF4 targets in an on-axis PLD geometry on (100) CaF2. These films exhibit a high density of particulates on the surface which are ejected from the target in the ablation process. Growth from Nd-doped polycrystalline GdLiF4 ablation targets results in relatively smooth films with lower particulate densities, as Nd doping significantly increases the optical absorption of GdLiF4 at the ablation laser wavelength of 193 nm and permits efficient pulsed-laser deposition. Optical emission spectra of the ablation pume reveals the presence of atomic fluorine, gadolinium, and lithium, indicating the dissociation of the metal-fluorine bonds in the ablation process. In addition, we find that the residual background oxygen pressure must be sufficiently reduced to avoid the formation of Gd4O3F6 as an impurity oxy-fluoride phase in the films.

Threshold Level Laser Ablation of Yba2Cu3Ox+6 at 351 nm, 248 nm, and 193 nm: Ejected Product Population and Kinetic Energy Distributions

1990 ◽  
Vol 191 ◽  
Author(s):  
L. Wiedeman ◽  
H. Helvajian
Keyword(s):  
Kinetic Energy ◽  
Laser Fluence ◽  
High Vacuum ◽  
Threshold Level ◽  
Product Formation ◽  
Laser Wavelength ◽  
Uv Laser ◽  
Desorption Process ◽  
Level Laser ◽  
193 Nm

ABSTRACTUsing a sintered Yba2Cu3Ox+6 wafer in high vacuum, we have measured the photo-ejected products and kinetic energies at selected UV laser wavelengths (351 nm, 248 nm, and 193 nm) where the laser fluence is maintained near product formation threshold. At these fluences, we are well below the above surface plasma formation threshold and do not detect; any evidence for surface melting. Our results show that, for a specific laser wavelength, both the ion and the neutral mass spectrum agree. The measured spectrum shows that the photablated products consist only of atomic and diatomic species. In addition, the oxygen is bound only to the yttrium and barium. Our measurements further show that, for a specific ejected species, the yield is dependent on both the laser fluence and wavelength. However, the measured KE distribution is independent of the laser fluence for fluences near threshold. The species are ejected with mean KE between 6–9 eV and no species has kinetic energy in excess of 13 eV Our results imply that for UV laser threshold fluence ablation, the excitation/desorption process is nonthermal.

Sign in / Sign up

Export Citation Format

Share Document