Electrical Characterization and Interface State Density Properties of the ITO/C70/Au Schottky Diode

2007 ◽  
Vol 111 (3) ◽  
pp. 1505-1507 ◽  
Author(s):  
Fahrettin Yakuphanoglu
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Interface State Density

scholarly journals Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode

2021 ◽  
Vol 13 (4) ◽  
pp. 04002-1-04002-5
Author(s):  
A. H. Khediri ◽  
◽  
A. Talbi ◽  
M. A. Benamara ◽  
Z. Benamara ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

scholarly journals A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

2018 ◽  
Vol 51 (6) ◽  
pp. 065102 ◽  
Author(s):  
Jidong Jin ◽  
Jiawei Zhang ◽  
Andrew Shaw ◽  
Valeriya N Kudina ◽  
Ivona Z Mitrovic ◽  
...  
Keyword(s):  
Schottky Diode ◽  
High Speed ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Effect of annealing on interface state density of Ni-silicided/Si1−xGex Schottky diode

2005 ◽  
Vol 8 (1-3) ◽  
pp. 249-253 ◽  
Author(s):  
A.R. Saha ◽  
S. Chattopadhyay ◽  
G.K. Dalapati ◽  
C. Bose ◽  
C.K. Maiti
Keyword(s):  
Schottky Diode ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Technique

1985 ◽  
Vol 54 ◽  
Author(s):  
M. I. Chaudhry ◽  
W. B. Berry
Keyword(s):  
Electrical Characterization ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Data ◽  
Capacitance Voltage ◽  
Conductance Technique ◽  
Electronic Surface

ABSTRACTThe electrical properties of the SiO2/SiC interface were studied using the conductance vs voltage (G-V) data for the metal-oxide-SiC (MOS) structure. It was found that the dry oxide contained too mjch charge either at the oxide-SiC interface or within the oxide films to obtain useful data. On the other hand the wet oxide invariably resulted in better capacitance and conductance data. The capacitance-voltage data showed that the SiC surface exhibited accumulation, depletion or inversion when the appropriate gate bias was applied. The conductance-voltage data indicate electronic surface states at the oxide-SiC interface. From this conductance data the interface state density has been estimated.

Electronic and interface state density distribution properties of Ag/p-Si Schottky diode

2005 ◽  
Vol 252 (5) ◽  
pp. 1966-1973 ◽  
Author(s):  
Mustafa Okutan ◽  
Engin Basaran ◽  
Fahrettin Yakuphanoglu
Keyword(s):  
Density Distribution ◽  
Schottky Diode ◽  
Interface State ◽  
State Density ◽  
Interface State Density
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