Electronic and interface state density distribution properties of Ag/p-Si Schottky diode

2005 ◽  
Vol 252 (5) ◽  
pp. 1966-1973 ◽  
Author(s):  
Mustafa Okutan ◽  
Engin Basaran ◽  
Fahrettin Yakuphanoglu
2018 ◽  
Vol 51 (6) ◽  
pp. 065102 ◽  
Author(s):  
Jidong Jin ◽  
Jiawei Zhang ◽  
Andrew Shaw ◽  
Valeriya N Kudina ◽  
Ivona Z Mitrovic ◽  
...  

2005 ◽  
Vol 8 (1-3) ◽  
pp. 249-253 ◽  
Author(s):  
A.R. Saha ◽  
S. Chattopadhyay ◽  
G.K. Dalapati ◽  
C. Bose ◽  
C.K. Maiti

2006 ◽  
Vol 527-529 ◽  
pp. 1525-1528
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. Paul Chow

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.


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