Temperature-Dependent Photoelectron Spectroscopy of Methyl Benzoate Anions:  Observation of Steric Effect ino-Methyl Benzoate†

2005 ◽  
Vol 109 (50) ◽  
pp. 11395-11400 ◽  
Author(s):  
Hin-Koon Woo ◽  
Xue-Bin Wang ◽  
Boggavarapu Kiran ◽  
Lai-Sheng Wang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Steric Effect ◽  
Methyl Benzoate ◽  
Temperature Dependent

Photoelectron Spectroscopy of Cold Hydrated Sulfate Clusters, SO42−(H2O)n(n= 4−7): Temperature-Dependent Isomer Populations

2009 ◽  
Vol 113 (19) ◽  
pp. 5567-5576 ◽  
Author(s):  
Xue-Bin Wang ◽  
Alina P. Sergeeva ◽  
Jie Yang ◽  
Xiao-Peng Xing ◽  
Alexander I. Boldyrev ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Temperature Dependent ◽  
Hydrated Sulfate

scholarly journals Temperature-Dependent Broadening of the Ultraviolet Photoelectron Spectrum of Au(110)

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5969
Author(s):  
Tomonari Nishida ◽  
Ikuo Kinoshita ◽  
Juntaro Ishii
Keyword(s):  
Fourier Transform ◽  
Temperature Dependence ◽  
Photoelectron Spectroscopy ◽  
Photoelectron Spectrum ◽  
Thermodynamic Temperature ◽  
Temperature Dependent ◽  
Photoelectron Emission ◽  
The Fourier Transform ◽  
The Relationship

To determine the thermodynamic temperature of a solid surface from the electron energy distribution measured by photoelectron spectroscopy, it is necessary to accurately evaluate the energy broadening of the photoelectron spectrum and investigate its temperature dependence. Broadening functions in the photoelectron spectrum of Au(110)’s surface near the Fermi level were estimated successfully using the relationship between the Fourier transform and the convolution integral. The Fourier transform could simultaneously reduce the noise of the spectrum when the broadening function was derived. The derived function was in the form of a Gaussian, whose width depended on the thermodynamic temperature of the sample and became broader at higher temperatures. The results contribute to improve accuracy of the determination of thermodynamic temperature from the photoelectron spectrum and provide useful information on the temperature dependence of electron scattering in photoelectron emission processes.

Interface structure and formation between gold and trimethylcyclohexane polycarbonate

1999 ◽  
Vol 14 (9) ◽  
pp. 3538-3543 ◽  
Author(s):  
C. v. Bechtolsheim ◽  
V. Zaporojtchenko ◽  
F. Faupel
Keyword(s):  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Cluster Formation ◽  
Systematic Investigation ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Metal Diffusion ◽  
Atomic Force ◽  
Transmission Electron

This paper presents the results of a systematic investigation of structure and formation of the interface between gold and trimethylcyclohexane polycarbonate, particularly concerning interface evolvement during gold evaporation and the influence of evaporation rate, substrate temperature, and subsequent annealing. The means of investigation were cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. Extensive metal diffusion into the polymer and cluster formation near the interface were observed at deposition rates of the order of one monolayer per minute and below. The penetration depth is strongly temperature dependent. At high evaporation rates metal aggregation at the surface prevents cluster formation inside the polymer. No diffusion into the polymer was observed from metal films deposited at room temperature after extensive annealing at elevated temperatures.

A fast x-ray photoelectron spectroscopy study of the adsorption and temperature-dependent decomposition of propene on Ni(100)

2001 ◽  
Vol 115 (17) ◽  
pp. 8133-8140 ◽  
Author(s):  
Caroline M. Whelan ◽  
Ralf Neubauer ◽  
Dieter Borgmann ◽  
Reinhard Denecke ◽  
Hans-Peter Steinrück
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
Temperature Dependent ◽  
X Ray

scholarly journals Electronic Structure, Localization and 5f Occupancy in Pu Materials

2012 ◽  
Vol 1444 ◽  
Author(s):  
Miles F. Beaux ◽  
John J. Joyce ◽  
Tomasz Durakiewicz ◽  
Kevin S. Graham ◽  
Eric D. Bauer ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fermi Energy ◽  
Photoelectron Spectroscopy ◽  
Electronic Configuration ◽  
Multiplet Structure ◽  
Temperature Dependent ◽  
Small Component ◽  
Narrow Peak ◽  
Valence Electronic Structure

ABSTRACTThe electronic structure of delta plutonium (δ-Pu) and plutonium compounds is investigated using photoelectron spectroscopy (PES). Results for δ-Pu show a small component of the valence electronic structure which might reasonably be associated with a 5f6 configuration. PES results for PuTe are used as an indication for the 5f6 configuration due to the presence of atomic multiplet structure. Temperature dependent PES data on δ-Pu indicate a narrow peak centered 20 meV below the Fermi energy and 100 meV wide. The first PES data for PuCoIn5 indicate a 5f electronic structure more localized than the 5fs in the closely related PuCoGa5. There is support from the PES data for a description of Pu materials with an electronic configuration of 5f5 with some admixture of 5f6 as well as a localized/delocalized 5f5 description.

THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO2 INTERFACIAL LAYER

2019 ◽  
Vol 26 (08) ◽  
pp. 1950045 ◽  
Author(s):  
ABDULKERIM KARABULUT ◽  
IKRAM ORAK ◽  
MUJDAT CAGLAR ◽  
ABDULMECIT TURUT
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Temperature Dependent ◽  
Mos Capacitor ◽  
Gaas Wafer ◽  
Layer Deposition ◽  
Current Voltage ◽  
High Dielectric

The Au/Ti/HfO2/[Formula: see text]-GaAs metal/insulating layer/semiconductor structures have been fabricated using standard thermal atomic layer deposition. We experimentally showed whether or not the HfO2 interfacial layer grown on the [Formula: see text]-GaAs wafer modifies the barrier height (BH) of the device at the room temperature. Besides, we investigated the measurement based on temperature dependence of the device parameters from the current–voltage ([Formula: see text]–[Formula: see text]) characteristics of the diode in 60–400[Formula: see text]K range with steps of 10[Formula: see text]K. The X-ray photoelectron spectroscopy (XPS) have been carried out to characterize the surfaces of both [Formula: see text]-GaAs wafer and HfO2 thin films. The series resistance value from the temperature-dependent [Formula: see text]–[Formula: see text] characteristics decreased with decreasing temperature, which is a desired positive result for the devices developed from the MOS capacitor. The BH value of 0.94[Formula: see text]eV (300[Formula: see text]K) has been obtained for the device with the HfO2 layer which is a higher value than the value of 0.77[Formula: see text]eV (300[Formula: see text]K) of the device without HfO2 layer. Therefore, we can say that the HfO2 thin layer at the metal/GaAs interface can also be used for the BH modification as a gate insulator for GaAs MOS capacitor and MOSFETs. When the temperature-dependent [Formula: see text]–[Formula: see text] characteristics at low temperatures have been considered, it has been observed that the current prefers to flow through the lowest BHs due to the BH inhomogeneities.

Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy

2010 ◽  
Vol 96 (13) ◽  
pp. 132902 ◽  
Author(s):  
Hiroaki Arimura ◽  
Richard Haight ◽  
Stephen L. Brown ◽  
Andrew Kellock ◽  
Alessandro Callegari ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Temperature Dependent ◽  
Pump Probe ◽  
Induced Dipole
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