Spray-deposited metal-chalcogenide photodiodes for low cost infrared imagers

MRS Advances ◽  
2020 ◽  
Vol 5 (39) ◽  
pp. 2013-2022
Author(s):  
Tommy O. Boykin ◽  
Nagendra Dhakal ◽  
Javaneh Boroumand ◽  
F. Javier Gonzalez ◽  
Isaiah O. Oladeji ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Large Format ◽  
Metal Chalcogenide ◽  
Deposited Metal ◽  
Reduced Scale

AbstractLow-cost, light-weight, low-power, large-format, room-temperature, mid-wave infrared (MWIR) detectors are needed for reduced-scale aircraft. An opportunity, suggested by direct-read X-radiography systems, is the use of thin film transistor (TFT) array as read-out integrated circuit (ROIC) for low-cost sensors deposited directly and unpatterned onto this ROIC. TFTs have already been thoroughly optimized for power, weight, large-format, and cost by the flat-panel-display industry. We present experimental investigation of aqueous-spray-deposited, mid-wave-IR, metal-chalcogenide heterojunction CdS/PbS photodiodes for this application. Measured responsivity, detectivity D*, and photoresponse spectra are reported.

Morphology Evolution and Luminescence Properties of YF3: Sm Nano-/Microcrystals

2012 ◽  
Vol 463-464 ◽  
pp. 112-118
Author(s):  
Feng Tao ◽  
Geng Zhu ◽  
Zhi Jun Wang ◽  
Feng Pan ◽  
Yu Feng Sun ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Growth Mechanism ◽  
Room Temperature ◽  
Red Light ◽  
Environmentally Friendly ◽  
Morphology Evolution ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Devices ◽  
Potential Applications

Abstract. Recently, there has been increasting interest in the doping of nano-/microcrystal hosts with Sm3+. However, very few examples of Sm3+doped YF3-based nanophosphors have been reported. In this paper, a variety of uniform YF3:Sm nano-/microcrystals have been successfully prepared by a facile, effective, and environmentally friendly hydrothermal method. The morphology evolution process has been investigated by quenching the reaction at different time. Based on the results, a possible growth mechanism is presented in detail. The as-obtained YF3:Sm nano-/microcrystals show strong yellow and red light emissions under room temperature, which is quite different from those reported previously and might find potential applications in fields such as light phosphor powers and advanced flat panel display devices.

In situ and Ex situ Applications of Spectroscopic Ellipsometry

1993 ◽  
Vol 324 ◽  
Author(s):  
John A. Woollam ◽  
Blaine Johs ◽  
William A. McGahan ◽  
Paul G. Snyder ◽  
Jeffrey Hale ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Integrated Circuit ◽  
Ex Situ ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Multilayer Stacks ◽  
Deposition Control

AbstractWe briefly review the optics of ellipsometry, followed by discussions of a series of example applications of the technique including single films on a substrate; multilayer stacks common to silicon integrated circuit fabrication; flat panel display materials, and in situ semiconductor growth and deposition control.

The Design and Implementation of a PLC Based Gas Turbine Controller for a Shipboard Application

2000 ◽  
Author(s):  
Vincent P. Tolotta
Keyword(s):  
Control System ◽  
Gas Turbine ◽  
Low Cost ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Loop Control ◽  
Steady State Operation ◽  
Power Turbine ◽  
Wide Range ◽  
Supervisory Control System

A paper will be presented describing the design and development of the Gas Turbine Local Controller replacement used on the Magnetic Minesweeping Gas Turbine Generator (MMGTG) on the US Navy MCM-1 Class of ships. The advent of processor based controllers including PLCs has provided a low cost alternative for control system upgrades when faced with increasing maintenance costs and obsolescence issues of analog and hard relay logic control systems. The replacement controller is a Programmable Logic Controller (PLC) based system linked to a flat panel display and a supervisory control system. A MMGTG during pulsing operations applies a severe load transient cycle to the gas turbine for the fuel control to meet in a stable and safe manner. The algorithms which employ an adaptive Proportional Integral Derivative (PID) loop control structure with internal limiting constraints based on engine state are used to manage these transients, power turbine entry temperature and a wide range of steady state operation. The controller includes logic for alarming, start/stop and automatic shutdown. The design of the hardwired automatic shutdown logic integrated to the PLC will be presented. The control system design will be described in terms of its integration to a supervisory network, local control functionality and shipboard considerations. The Human Machine Interface screens of the flat panel display and their design are also considered.

ELECTRICAL AND OPTICAL PROPERTIES OF OLED USING NEW EMISSIVE MATERIAL Al2Nq4

2006 ◽  
Vol 05 (06) ◽  
pp. 859-864
Author(s):  
KI-SUNG YANG ◽  
HO-SIK LEE ◽  
SEUNG-UN KIM ◽  
YOON-KI JANG ◽  
DOO-SEOK KIM ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
System Model ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Analysis System ◽  
Green Photoluminescence

Since the first report of the light-emitting diodes based on Alq 3, many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescent (EL) device. We synthesized new emissive material, 1, 4-dihydoxy-5, 8-naphtaquinone· Alq 3 complex( Al 2 Nq 4), and extended efforts have been made to obtain high-performance electroluminescent (EL) devices. Current–voltage (I–V) and luminance–voltage (L–V) characteristics were measured by Flat Panel Display Analysis System (Model 200-AT) at room temperature. The Al 2 Nq 4 shows green photoluminescence and electroluminescence spectra at about 510 nm, and ITO/Al 2 Nq 4/Cathode device shows typical rectifying characteristics.

Bistable Technology in Flat Panel Display: Principle and Progress

2010 ◽  
Vol 428-429 ◽  
pp. 206-211 ◽  
Author(s):  
Zi Qiang Huang
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Liquid Crystals ◽  
Thin Film Transistor ◽  
Manufacturing Cost ◽  
High Grade ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Devices ◽  
Light Interference

Active matrices often related with high grade display devices, due to application of the storage elements, typically thin film transistor (TFT). Because of the complex procedures in the manufacturing TFT, investment of the high value manufacturing equipments and clarification plants is necessary, hence increasing the manufacturing cost of the flat panel, and more importantly, causing the pollution of water and air. As the contribution of TFT array merely exists in supplying storage function for the pixels of the display panel, large efforts have been made to find suitable cells that have bistable effect, so as to substitute the effect of TFT. As the bistable cell is just the storage pixel, one could construct a bistable cell to skip the needs of TFT active matrices. The paper is to introduce currently available bistable display devices in the following field: liquid crystal bistable displays with cholesteric liquid crystals, which is an example to introduce the bistable technology; iMod display devices based on mechanic induced bistable and light interference, which shows the possibility to construct bistable display; and the display based on solid powder movement in air or in vacuum, so called liquid powder displays, which shows how to improve the existed display.

Electrically active organic and polymeric materials for thin-film-transistor technologies

1996 ◽  
Vol 11 (6) ◽  
pp. 1581-1592 ◽  
Author(s):  
Andrew J. Lovinger ◽  
Lewis J. Rothberg
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Polymeric Materials ◽  
Drain Current ◽  
Current Status ◽  
Flat Panel Display ◽  
Semiconducting Materials ◽  
Flat Panel ◽  
Technological Potential ◽  
Potential Alternative

Organic and polymeric materzials have seen a tremendous growth in research in the last five years as potential electroactive elements in thin-film-transistor (TFT) applications. These are driven by the increasing interest in flat-panel-display applications, for which organic and polymeric materials offer strong promise in terms of properties, processability, cost, and compatibility with eventual lightweight, flexible plastic displays. In this review we summarize the current status of our knowledge on the science of these organic and polymeric semiconducting materials. Most of these are based on linear thiophenes, especially a-hexathienyl, which has elicited by far the most attention. Mobility values in the 10−2–10−1 cm2/Vs and especially source-drain current on/off ratios of up to 106 make this a highly promising potential alternative to amorphous silicon. Other thienyl compounds are also discussed, as are polymeric analogues. A brief discussion of technological potential, limitations, and problems that need to be overcome is given at the end.

scholarly journals Optical Detection of Protrusive Defects on Thin-film Transistor

2018 ◽  
Author(s):  
Fu-Ming Tzu ◽  
Jung-Hua Chou
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Cost Effective ◽  
Liquid Crystal Displays ◽  
Maximum Error ◽  
Color Filter ◽  
Depth Of Field ◽  
Fast Method ◽  
Flat Panel Display ◽  
Flat Panel

Protrusive defects on the color filter of thin-film transistor (TFT) liquid crystal displays (LCDs) frequently damage the valuable photomask. An fast method using side-view illuminations associated with digital charge-couple devices (CCDs) to detect the protrusive defect in the four substrates, which are the black matrix (BM), red, green, and blue. Between the photomask and substrate, the depth of field (DOF) is normally 300 μm for the proximity-type aligner; we select the four substrates to evaluate the detectability in the task. The experiment is capable of detecting measurements of 300 μm and even lower than 100 μm can be assessed successfully. The maximum error of the measurement is within 6% among the four samples. Furthermore, the uncertainty analysis of three standard deviations is conducted. Thus, the method is cost-effective to prevent damage for valuable photomasks in the flat panel display industry.

Next Generation of Thin Film Transistors Based on Zinc Oxide

2004 ◽  
Vol 811 ◽  
Author(s):  
E. Fortunato ◽  
P. Barquinha ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
L. Pereira ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Optoelectronic Device ◽  
Field Effect Mobility ◽  
Next Generation

ABSTRACTWe report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Use of Plasma Processing in Making Integrated Circuits and Flat-Panel Displays

MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 38-42 ◽  
Author(s):  
Richard A. Gottscho ◽  
Maria E. Barone ◽  
Joel M. Cook
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Integrated Circuit ◽  
Plasma Processing ◽  
Pattern Transfer ◽  
Flat Panel Displays ◽  
Flat Panel Display ◽  
Large Area ◽  
Flat Panel ◽  
Microelectronic Devices

The ever-shrinking dimensions of microelectronic devices has mandated the use of plasma processing in integrated circuit (IC) factories worldwide. Today the plasma-processing industry has grown to over $3 billion in revenues per year, well in excess of predictions made only a few years ago. Plasma etching and deposition systems are also found throughout flat-panel-display (FPD) factories despite the much larger dimensions of thin-film transistors (TFTs) that are used to switch picture elements (pixels) on and off. Besides the use of plasma in etching and depositing thin films, other processes include the following: removal of photoresist remnants after development (descumming), stripping developed photoresist after pattern transfer (ashing), and passivating defects in polycrystalline material. Why are plasma processes so prevalent?In etching, plasmas are used for high-fidelity transfer of the photolithographically defined pattern that defines the device or circuit. More generally, plasma provides the means to taper sidewalls. In Si processing, the sidewalls must be nearly vertical to obtain high density integration and faster performance. However in making FPDs, sidewalls are tapered to obtain uniform step coverage and reduce shorting. In deposition, plasmas are used to enable processing at low temperature. For both etching and deposition, only plasma processing provides an economically viable means for processing large area substrates: 300 mm for Si and more than 550 × 650 mm for FPDs. It is the ability to scale uniform reactant generation to larger areas that sets plasma apart from beam-based processes that might otherwise offer the desired materials modifications. The nonequilibrium characteristics of plasma further distinguish this processing method. Energetic electrons break apart reactant precursors while ions bombard the surface anisotropically.

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