van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe

2019 ◽  
Vol 141 (7) ◽  
pp. 3110-3115 ◽  
Author(s):  
Tao Shen ◽  
Ji-Chang Ren ◽  
Xinyi Liu ◽  
Shuang Li ◽  
Wei Liu
Keyword(s):  
Ohmic Contacts ◽  
Van Der Waals

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

scholarly journals Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

2016 ◽  
Vol 2 (4) ◽  
pp. 1500405 ◽  
Author(s):  
Mojtaba Farmanbar ◽  
Geert Brocks
Keyword(s):  
Ohmic Contacts ◽  
Van Der Waals ◽  
2D Semiconductors

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Infrared diode laser jet spectroscopy of the van der Waals complex (N2O)2

1997 ◽  
Vol 91 (4) ◽  
pp. 689-696 ◽  
Author(s):  
HAI-BO QIAN ◽  
WOUTER HERREBOUT ◽  
BRIAN HOWARD
Keyword(s):  
Diode Laser ◽  
Van Der Waals ◽  
Van Der Waals Complex
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