scholarly journals Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

2016 ◽  
Vol 2 (4) ◽  
pp. 1500405 ◽  
Author(s):  
Mojtaba Farmanbar ◽  
Geert Brocks
Keyword(s):  
Ohmic Contacts ◽  
Van Der Waals ◽  
2D Semiconductors

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

Tight-binding modeling of excitonic response in van der Waals stacked 2D semiconductors

2019 ◽  
Vol 4 (4) ◽  
pp. 969-974 ◽  
Author(s):  
Cho Tung Yip ◽  
Tsz Wing Lo ◽  
Si-Cong Zhu ◽  
Guang Yi Jia ◽  
Huarui Sun ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
2D Semiconductors

A phenomenological tight-binding model can quantitatively predict the exciton response of van der Waals stacked 2D semiconductors.

van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe

2019 ◽  
Vol 141 (7) ◽  
pp. 3110-3115 ◽  
Author(s):  
Tao Shen ◽  
Ji-Chang Ren ◽  
Xinyi Liu ◽  
Shuang Li ◽  
Wei Liu
Keyword(s):  
Ohmic Contacts ◽  
Van Der Waals

scholarly journals Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi‐van der Waals Contacts

2019 ◽  
Vol 6 (11) ◽  
pp. 1801841 ◽  
Author(s):  
Junjun Wang ◽  
Feng Wang ◽  
Zhenxing Wang ◽  
Ruiqing Cheng ◽  
Lei Yin ◽  
...  
Keyword(s):  
Van Der Waals ◽  
2D Semiconductors ◽  
Van Der Waals Contacts

scholarly journals Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

2016 ◽  
Vol 2 (4) ◽  
pp. e1600069 ◽  
Author(s):  
Yuanyue Liu ◽  
Paul Stradins ◽  
Su-Huai Wei
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Fundamental Properties ◽  
2D Semiconductors ◽  
Semiconductor Junction ◽  
Device Applications ◽  
Gap States

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

scholarly journals Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qianqian Wang ◽  
Liemao Cao ◽  
Shi-Jun Liang ◽  
Weikang Wu ◽  
Guangzhao Wang ◽  
...  
Keyword(s):  
Energy Efficient ◽  
High Performance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Metal Contacts ◽  
Fermi Level Pinning ◽  
2D Semiconductors ◽  
Semiconductor Electronic ◽  
Wide Range

AbstractMetal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ≈ 0.7 is obtained which outperforms the vast majority of other 2D semiconductors. Such intriguing behavior arises from the septuple-layered morphology of MoSi2N4 and WSi2N4 monolayers in which the semiconducting electronic states are protected by the outlying Si–N sublayer. We identify Ti, Sc, and Ni as highly efficient Ohmic contacts to MoSi2N4 and WSi2N4 with zero interface tunneling barrier. Our findings reveal the potential of MoSi2N4 and WSi2N4 as a practical platform for designing high-performance and energy-efficient 2D semiconductor electronic devices.

Vertical dielectric screening of few-layer van der Waals semiconductors

Nanoscale ◽  
2017 ◽  
Vol 9 (38) ◽  
pp. 14540-14547 ◽  
Author(s):  
Jahyun Koo ◽  
Shiyuan Gao ◽  
Hoonkyung Lee ◽  
Li Yang
Keyword(s):  
Van Der Waals ◽  
Fundamental Parameter ◽  
Two Dimensional ◽  
2D Semiconductors ◽  
Dielectric Screening

Vertical dielectric screening is a fundamental parameter of few-layer van der Waals two-dimensional (2D) semiconductors.

scholarly journals p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices

RSC Advances ◽  
2019 ◽  
Vol 9 (60) ◽  
pp. 35039-35044 ◽  
Author(s):  
Pan Li ◽  
Kai Yuan ◽  
Der-Yuh Lin ◽  
Tingting Wang ◽  
Wanying Du ◽  
...  
Keyword(s):  
Wavelength Range ◽  
High Performance ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Near Ir ◽  
2D Semiconductors

A library of 2D semiconductors are prepared providing a new platform for developing high-performance optoelectronic devices. All-2D optoelectronic devices based on type-II p-MoS2/n-InSe vdWs heterojunctions operate at the near-IR wavelength range.

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