Switchable Schottky Contacts: Simultaneously Enhanced Output Current and Reduced Leakage Current

2019 ◽  
Vol 141 (4) ◽  
pp. 1628-1635 ◽  
Author(s):  
Guirong Su ◽  
Sha Yang ◽  
Shuang Li ◽  
Christopher J. Butch ◽  
Sergey N. Filimonov ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Output Current

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

2017 ◽  
Vol 26 (2) ◽  
pp. 027105
Author(s):  
Yong Lei ◽  
Jing Su ◽  
Hong-Yan Wu ◽  
Cui-Hong Yang ◽  
Wei-Feng Rao
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Free Standing ◽  
Reverse Leakage Current

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga2O3 Grown by Edge-Defined Film-Fed Growth

2019 ◽  
Vol 8 (7) ◽  
pp. Q3054-Q3057 ◽  
Author(s):  
Leidang Zhou ◽  
Xing Lu ◽  
Liang Chen ◽  
Xiaoping Ouyang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Frenkel Emission

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers

2009 ◽  
Vol 24 (5) ◽  
pp. 055005 ◽  
Author(s):  
Sen Huang ◽  
Bo Shen ◽  
Fu-Jun Xu ◽  
Fang Lin ◽  
Zhen-Lin Miao ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2188-2193 ◽  
Author(s):  
D. Marcon ◽  
J. Viaene ◽  
P. Favia ◽  
H. Bender ◽  
X. Kang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Output Current ◽  
Current Increase ◽  
Gan Hemts ◽  
Current Drop

Electrical Characterization of Defects in GaAs Grown on Si by MBE

1987 ◽  
Vol 91 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
A. Y. Cho
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Internal Heating ◽  
Carrier Generation ◽  
Gaas On Si ◽  
Large Current

ABSTRACTWe show that MBE-grown GaAs on Si exhibits only a modest increase in the concentrations of the well-known electron traps typical of MBE-GaAs with no evidence for any new electron deep levels in the upper half of the bandgap in spite of the dislocations and other defects in the material. As shown by Au-GaAs Schottky contacts, the defects are unnoticeable when the device is forward biased but become very active in reverse biased condition, causing large leakage current and low breakdown voltage (although the device is still acceptable for many applications, especially FET's). The defects become more active after hydrogenation and more inactive after a post-growth rapid thermal annealing (RTA). Performance of devices made on thermally annealed GaAs on Si is comparable to those of GaAs on GaAs. Also, following the application of a large- current the device behavior improves, indicating a self-annealing action as a result of internal heating. The reverse current in the as-grown material shows a very weak temperature dependence, indicating its origin is not thermionic emission or carrier generation. It is speculated that a large part of the leakage current in the as-grown GaAs on Si is due to the defect assisted tunneling. After RTA, the average spacing between defect clusters increases, thus reducing the tunneling probability and tremendously improving the device characteristics.

scholarly journals Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

2006 ◽  
Vol 89 (3) ◽  
pp. 033503 ◽  
Author(s):  
R. X. Wang ◽  
S. J. Xu ◽  
A. B. Djurišić ◽  
C. D. Beling ◽  
C. K. Cheung ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Schottky Contacts ◽  
Oxide Thin Film ◽  
Reverse Leakage Current
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