Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2188-2193 ◽  
Author(s):  
D. Marcon ◽  
J. Viaene ◽  
P. Favia ◽  
H. Bender ◽  
X. Kang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Output Current ◽  
Current Increase ◽  
Gan Hemts ◽  
Current Drop

scholarly journals Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

2021 ◽  
Vol 118 (7) ◽  
pp. 072103
Author(s):  
T. Liu ◽  
H. Watanabe ◽  
S. Nitta ◽  
J. Wang ◽  
G. Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gan Hemts ◽  
Mg Doped

Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs withbeta-Ga2O3back barrier

2021 ◽  
Author(s):  
Mei Ge ◽  
Yi Li ◽  
Youhua Zhu ◽  
Dunjun Chen ◽  
ZhiLiang Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gan Hemts

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

2018 ◽  
Vol 27 (9) ◽  
pp. 097309 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Yang Xiao ◽  
Xiao-Hua Ma ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

2019 ◽  
Vol 114 (1) ◽  
pp. 013503 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Guo-Guo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts
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