Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga2O3 Grown by Edge-Defined Film-Fed Growth

2019 ◽  
Vol 8 (7) ◽  
pp. Q3054-Q3057 ◽  
Author(s):  
Leidang Zhou ◽  
Xing Lu ◽  
Liang Chen ◽  
Xiaoping Ouyang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Frenkel Emission

On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

2017 ◽  
Vol 26 (2) ◽  
pp. 027105
Author(s):  
Yong Lei ◽  
Jing Su ◽  
Hong-Yan Wu ◽  
Cui-Hong Yang ◽  
Wei-Feng Rao
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Free Standing ◽  
Reverse Leakage Current

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors

2003 ◽  
Vol 784 ◽  
Author(s):  
T. Yoshimura ◽  
D. Ito ◽  
H. Sakata ◽  
N. Shigemitsu ◽  
K. Haratake ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Electric Fields ◽  
Retention Time ◽  
Memory Retention ◽  
Frenkel Emission ◽  
Transient Spectroscopy ◽  
Leakage Current Mechanism ◽  
Capacitance Transient ◽  
The Relationship

ABSTRACTThe memory retention properties of Pt/YMnO3/Y2O3/Si capacitors were investigated for the application of ferroelectric gate transistors. The epitaxially grown Pt/YMnO3/Y2O3/Si capacitors showed ferroelectric type hysteresis loop on the capacitance-voltage properties. Although the retention time of the as-deposited capacitors was ∼103 s, it was prolonged up to 104 s when the leakage current density was reduced from 4×10-8 A/cm2 to 2×10-9 A/cm2 by the annealing under N2 ambience. To reveal the relationship between the retention time and leakage current, the leakage current mechanism was investigated comparing several conduction mechanisms. It was found that the dominant leakage mechanisms at high and low electric fields were Poole-Frenkel emission from the Y2O3 layer and ohmic conduction, respectively. This result indicates that the leakage current was limited by the Y2O3 layer at high electric field and was mainly dominated by the amount of defects in the YMnO3 layer at low electric field. From the pseudo isothermal capacitance transient spectroscopy (ICTS), it was determined that the trap density was in an order of 1015 cm-3. Since the variation of the leakage current by annealing was observed only in the low electric field region, it is suggested that the retention properties of the Pt/YMnO3/Y2O3/Si capacitors was influenced by the amount of defects in the YMnO3 layer.

Switchable Schottky Contacts: Simultaneously Enhanced Output Current and Reduced Leakage Current

2019 ◽  
Vol 141 (4) ◽  
pp. 1628-1635 ◽  
Author(s):  
Guirong Su ◽  
Sha Yang ◽  
Shuang Li ◽  
Christopher J. Butch ◽  
Sergey N. Filimonov ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Output Current

Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers

2009 ◽  
Vol 24 (5) ◽  
pp. 055005 ◽  
Author(s):  
Sen Huang ◽  
Bo Shen ◽  
Fu-Jun Xu ◽  
Fang Lin ◽  
Zhen-Lin Miao ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Contacts ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Electrical Characterization of Defects in GaAs Grown on Si by MBE

1987 ◽  
Vol 91 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
A. Y. Cho
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Internal Heating ◽  
Carrier Generation ◽  
Gaas On Si ◽  
Large Current

ABSTRACTWe show that MBE-grown GaAs on Si exhibits only a modest increase in the concentrations of the well-known electron traps typical of MBE-GaAs with no evidence for any new electron deep levels in the upper half of the bandgap in spite of the dislocations and other defects in the material. As shown by Au-GaAs Schottky contacts, the defects are unnoticeable when the device is forward biased but become very active in reverse biased condition, causing large leakage current and low breakdown voltage (although the device is still acceptable for many applications, especially FET's). The defects become more active after hydrogenation and more inactive after a post-growth rapid thermal annealing (RTA). Performance of devices made on thermally annealed GaAs on Si is comparable to those of GaAs on GaAs. Also, following the application of a large- current the device behavior improves, indicating a self-annealing action as a result of internal heating. The reverse current in the as-grown material shows a very weak temperature dependence, indicating its origin is not thermionic emission or carrier generation. It is speculated that a large part of the leakage current in the as-grown GaAs on Si is due to the defect assisted tunneling. After RTA, the average spacing between defect clusters increases, thus reducing the tunneling probability and tremendously improving the device characteristics.

Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors

2003 ◽  
Vol 786 ◽  
Author(s):  
T. Yoshimura ◽  
D. Ito ◽  
H. Sakata ◽  
N. Shigemitsu ◽  
K. Haratake ◽  
...  
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Electric Fields ◽  
Retention Time ◽  
Memory Retention ◽  
Frenkel Emission ◽  
Transient Spectroscopy ◽  
Leakage Current Mechanism ◽  
Capacitance Transient ◽  
The Relationship

ABSTRACTThe memory retention properties of Pt/YMnO3/Y2O3/Si capacitors were investigated for the application of ferroelectric gate transistors. The epitaxially grown Pt/YMnO3/Y2O3/Si capacitors showed ferroelectric type hysteresis loop on the capacitance-voltage properties. Although the retention time of the as-deposited capacitors was ∼103 s, it was prolonged up to 104 s when the leakage current density was reduced from 4×10−8 A/cm2 to 2×10−9 A/cm2 by the annealing under N2 ambience. To reveal the relationship between the retention time and leakage current, the leakage current mechanism was investigated comparing several conduction mechanisms. It was found that the dominant leakage mechanisms at high and low electric fields were Poole-Frenkel emission from the Y2O3 layer and ohmic conduction, respectively. This result indicates that the leakage current was limited by the Y2O3 layer at high electric field and was mainly dominated by the amount of defects in the YMnO3 layer at low electric field. From the pseudo isothermal capacitance transient spectroscopy (ICTS), it was determined that the trap density was in an order of 1015 cm−3. Since the variation of the leakage current by annealing was observed only in the low electric field region, it is suggested that the retention properties of the Pt/YMnO3/Y2O3/Si capacitors was influenced by the amount of defects in the YMnO3 layer.

scholarly journals Poole–Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta2O5-MnO2 Capacitors

2019 ◽  
Vol 2019 ◽  
pp. 1-9
Author(s):  
Q. F. Pan ◽  
Q. Liu
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Time To Failure ◽  
Nondestructive Measurement ◽  
Time Dependent Dielectric Breakdown ◽  
Different Temperatures ◽  
Frenkel Emission ◽  
Lower Saturation

I-V characterization of Ta-Ta2O5-MnO2 capacitors was investigated at different temperatures, and Poole–Frenkel (PF) emission saturation was experimentally observed. Under the saturation voltage, the I-V curves at different temperature converged, and the temperature dependency was vanished. Above the saturation voltage, the leakage current was decreasing as the temperature increased. In order to evaluate the effects of saturation voltages (VS) on time-to-failure (TTF) of the capacitors, VS were first determined at +2°C and +25°C, then voltage accelerating tests were conducted at 85°C under 1.6 times of rated voltage. The distribution of VS and TTF of the samples were plotted and compared. It was shown that samples with lower saturation voltage failed earlier in the distribution of time-dependent dielectric breakdown. Comparing conventional methods for evaluating the quality of tantalum capacitors by measuring the leakage current at elevated temperature, the nondestructive measurement of saturation voltage at +2°C and +25°C may provide a novel and practicing approach tool to screening out capacitors with defected Ta2O5 layers.

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