Na Doping in PbTe: Solubility, Band Convergence, Phase Boundary Mapping, and Thermoelectric Properties

2020 ◽  
Vol 142 (36) ◽  
pp. 15464-15475 ◽  
Author(s):  
Priyanka Jood ◽  
James P. Male ◽  
Shashwat Anand ◽  
Yoshitaka Matsushita ◽  
Yoshiki Takagiwa ◽  
...  
Keyword(s):  
Phase Boundary ◽  
Thermoelectric Properties ◽  
Na Doping ◽  
Boundary Mapping

scholarly journals Experimental and computational phase boundary mapping of Co4Sn6Te6

2018 ◽  
Vol 6 (47) ◽  
pp. 24175-24185 ◽  
Author(s):  
Caitlin M. Crawford ◽  
Brenden R. Ortiz ◽  
Prashun Gorai ◽  
Vladan Stevanovic ◽  
Eric S. Toberer
Keyword(s):  
Phase Boundary ◽  
Thermoelectric Properties ◽  
Phase Stability ◽  
Computational Investigation ◽  
Boundary Mapping

Experimental and computational investigation of the phase stability and thermoelectric properties of the Co4Sn6Te6 skutterudite.

Using phase boundary mapping to resolve discrepancies in the Mg2Si–Mg2Sn miscibility gap

2021 ◽  
Author(s):  
Rachel Orenstein ◽  
James P. Male ◽  
Michael Toriyama ◽  
Shashwat Anand ◽  
G. Jeffrey Snyder
Keyword(s):  
Phase Diagram ◽  
Phase Boundary ◽  
Ternary Phase ◽  
Ternary Phase Diagram ◽  
Miscibility Gap ◽  
Boundary Mapping

A new understanding of the MgSi–MgSn miscibility gap is reached through phase boundary mapping the Mg–Si–Sn ternary phase diagram.

Carrier density control in Cu2HgGeTe4and discovery of Hg2GeTe4viaphase boundary mapping

2019 ◽  
Vol 7 (2) ◽  
pp. 621-631 ◽  
Author(s):  
Brenden R. Ortiz ◽  
Kiarash Gordiz ◽  
Lídia C. Gomes ◽  
Tara Braden ◽  
Jesse M. Adamczyk ◽  
...  
Keyword(s):  
Phase Boundary ◽  
Carrier Density ◽  
Density Control ◽  
Boundary Mapping

Phase boundary mapping in Cu2HgGeTe4allows discovery of Hg2GeTe4and further enables carrier density control over 4 orders of magnitude.

High temperature thermoelectric properties of Bi2−xNaxSr2Co2Oy ceramics

2015 ◽  
Vol 29 (27) ◽  
pp. 1550159 ◽  
Author(s):  
Q. L. He ◽  
S. Y. Li ◽  
F. Gao ◽  
Z. Zhu ◽  
X. Hu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Hole Doping ◽  
Doping Amount ◽  
Seebeck Coefficients ◽  
Na Doping ◽  
Electrical Conductivity Behavior ◽  
Lower Temperature ◽  
Conductivity Behavior

The Na doping effects on the high temperature thermoelectric properties of [Formula: see text] ([Formula: see text] = 0, 0.05, 0.10, 0.15, 0.20 and 0.30) ceramics were investigated from 343 K to 973 K. When [Formula: see text], the electrical resistivity of [Formula: see text] decreases with increasing Na doping amount due to the hole-doping effect, which exhibits metallic electrical conductivity behavior. While, at the temperature range of 480–830 K, the samples with [Formula: see text] exhibit semiconductor electrical conductivity behavior instead. The Seebeck coefficients are improved by Na doping at lower temperature, but they decrease slightly at higher temperature except for [Formula: see text]. Roughly, the thermal conductivity is depressed by the doping defects. As an overall result, the dimensionless figure of merit [Formula: see text] of [Formula: see text] reaches the maximum value of 0.3 K at 973 K, which is nearly twice the value of the undoped sample [Formula: see text].

scholarly journals Phase Boundary Mapping in ZrNiSn Half-Heusler for Enhanced Thermoelectric Performance

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Xiaofang Li ◽  
Pengbo Yang ◽  
Yumei Wang ◽  
Zongwei Zhang ◽  
Dandan Qin ◽  
...  
Keyword(s):  
Phase Boundary ◽  
Phase Diagrams ◽  
Lattice Thermal Conductivity ◽  
Heusler Phase ◽  
Solubility Range ◽  
Binary Phase Diagrams ◽  
Heating Treatment ◽  
Long Time ◽  
Equilibrium Phases ◽  
Boundary Mapping

The solubility range of interstitial Ni in the ZrNi1+xSn half-Heusler phase is a controversial issue, but it has an impact on the thermoelectric properties. In this study, two isothermal section phase diagrams of the Zr-Ni-Sn ternary system at 973 K and 1173 K were experimentally constructed based on the binary phase diagrams of Zr-Ni, Zr-Sn, and Ni-Sn. The thermodynamic equilibrium phases were obtained after a long time of heating treatment on the raw alloys prepared by levitation melting. Solubilities of x<0.07 at 973 K and x<0.13 at 1173 K were clearly indicated. An intermediate-Heusler phase with a partly filled Ni void was observed, which is believed to be beneficial to the lowered lattice thermal conductivity. The highest ZT value~0.71 at 973 K was obtained for ZrNi1.11Sn1.04. The phase boundary mapping provides an important instruction for the further optimization of ZrNiSn-based materials and other systems.

scholarly journals Achieving zT > 1 in Inexpensive Zintl Phase Ca9 Zn4+ x Sb9 by Phase Boundary Mapping

2017 ◽  
Vol 27 (20) ◽  
pp. 1606361 ◽  
Author(s):  
Saneyuki Ohno ◽  
Umut Aydemir ◽  
Maximilian Amsler ◽  
Jan-Hendrik Pöhls ◽  
Sevan Chanakian ◽  
...  
Keyword(s):  
Phase Boundary ◽  
Zintl Phase ◽  
Boundary Mapping

Thermoelectric Properties of SnS with Na-Doping

2017 ◽  
Vol 9 (39) ◽  
pp. 34033-34041 ◽  
Author(s):  
Binqiang Zhou ◽  
Shuai Li ◽  
Wen Li ◽  
Juan Li ◽  
Xinyue Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Na Doping

BaCu2Se2 based compounds as promising thermoelectric materials

2015 ◽  
Vol 44 (5) ◽  
pp. 2285-2293 ◽  
Author(s):  
Jing Li ◽  
Li-Dong Zhao ◽  
Jiehe Sui ◽  
David Berardan ◽  
Wei Cai ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Low Thermal Conductivity ◽  
Na Doping

The thermoelectric properties of Na doped BaCu2Se2 were studied. The electrical conductivity of BaCu2Se2 was increased by 2 orders of magnitude through Na doping at the Ba sites, combined with a surprisingly low thermal conductivity; a ZT of 1.0 has been obtained for Ba0.925Na0.075Cu2Se2 at 773 K.

Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2

2015 ◽  
Vol 44 (3) ◽  
pp. 1046-1051 ◽  
Author(s):  
Songting Cai ◽  
Zihang Liu ◽  
Jianyong Sun ◽  
Rui Li ◽  
Weidong Fei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Power Factor ◽  
Stacking Faults ◽  
Na Doping ◽  
P Type

Na substituting Sb in the AgSbSe2 not only improves the power factor caused by the enhanced carrier concentration, but also decreases the thermal conductivity due to point defects, nanoscale stacking faults and Na-rich precipitate. Consequently, a high ZT value of 0.92 is achieved in the AgSb0.99Na0.01Se2 sample.

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