scholarly journals Fullerene−Oligophenylenevinylene Hybrids:  Synthesis, Electronic Properties, and Incorporation in Photovoltaic Devices

2000 ◽  
Vol 122 (31) ◽  
pp. 7467-7479 ◽  
Author(s):  
Jean-François Eckert ◽  
Jean-François Nicoud ◽  
Jean-François Nierengarten ◽  
Sheng-Gao Liu ◽  
Luis Echegoyen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Photovoltaic Devices

Energetics and Optimal Molecular Packing for Singlet Fission in BN-doped Perylenes: Electronic Adiabatic State Basis Screening

2021 ◽  
Author(s):  
Anurag Singh ◽  
Alexander Humeniuk ◽  
Merle Insa Silja Röhr
Keyword(s):  
Electronic Properties ◽  
Molecular Packing ◽  
Photovoltaic Devices ◽  
Singlet Fission ◽  
Adiabatic State

Singlet fission has the potential to increase the efficiency of photovoltaic devices, but the design of suitable chromophores is notoriously difficult. Both the electronic properties of the monomer and the...

Star-shaped heptamers of discotic dyes as new materials for photovoltaic devices

2004 ◽  
Vol 836 ◽  
Author(s):  
S. Holger Eichhorn ◽  
Nicholas Fox ◽  
Bryan Bornais
Keyword(s):  
Liquid Crystal ◽  
Electronic Properties ◽  
Photovoltaic Devices ◽  
New Materials ◽  
Discotic Liquid Crystal ◽  
P Type ◽  
Potential Use

AbstractPotentially n-type and p-type semi-conducting discotic liquid crystal dyes are linked together to star-shaped heptamers, which might self-organize into super-columns of separated p-type and n-type columnar stacks. Their synthesis, mesomorphism, and electronic properties will be discussed along with their potential use in photovoltaic devices.

Defects in Copper Indium Aluminum Diselenide Films and their Impact on Photovoltaic Device Performance

2003 ◽  
Vol 763 ◽  
Author(s):  
Jennifer T. Heath ◽  
J. David Cohen ◽  
William N. Shafarman
Keyword(s):  
Electronic Properties ◽  
Photovoltaic Device ◽  
Absorber Layer ◽  
Device Performance ◽  
Photovoltaic Devices ◽  
Al Content ◽  
Copper Indium

AbstractThe electronic properties of polycrystalline CuIn1-xAlxSe2 (CIAS) films, which are incorporated as the absorber layer in photovoltaic devices, have been studied to better understand limitations on device performance. These studies have shown that compared to lower Al content films and to CuIn1-yGaySe2films, films with x ≥ 0.29 are relatively intrinsic, spatially nonuniform, and have broader bandtails characterized by much higher Urbach energies. This indicates that the CIAS films with x ≥ 0.29 are significantly more disordered than lower Al content CIAS or corresponding CIGS films, which likely negatively impacts the resulting photovoltaic device performance.

Molybdenum incorporated Cu1.69ZnSnS4 kesterite photovoltaic devices with bilayer microstructure and tunable optical-electronic properties

Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 777-787 ◽  
Author(s):  
Siarhei Zhuk ◽  
Terence Kin Shun Wong ◽  
Shreyash Sudhakar Hadke ◽  
Stener Lie ◽  
Asim Guchhait ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Photovoltaic Devices

Junction Capacitance Study of a-SiGe:H Solar Cells Grown at Varying RF and VHF Deposition Rates

2009 ◽  
Vol 1153 ◽  
Author(s):  
Peter G. Hugger ◽  
JinWoo Lee ◽  
David J. Cohen ◽  
Guozhen Yue ◽  
Xixiang Xu ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Germanium ◽  
Performance Parameters ◽  
Photovoltaic Devices ◽  
Solar Cell Device ◽  
Electrical And Optical Properties ◽  
Deposition Rates ◽  
Hydrogenated Silicon ◽  
Defect Densities ◽  
Made In

AbstractSignificant advances have been made in increasing the deposition rate of hydrogenated silicon germanium alloys (a-SiGe:H) using a modified VHF glow discharge deposition method while also maintaining good electronic properties important for its application in photovoltaic devices. We examine the electrical and optical properties of these alloys deposited either by RF (13.56MHz) or the modified VHF methods over deposition rates varying from 1 to 10 Å/s. The electronic properties of a series of 1.4 eV optical gap a-SiGe:H i-layers, in many cases in solar cell device configurations, were characterized. Drive-level capacitance profiling was used to determine the deep defect densities, and transient photocapacitance measurements allowed us to determine the Urbach energies. Results were obtained for both the annealed and light-soaked degraded states and these results were correlated to the cell performance parameters. In general the a-SiGe:H layers deposited using the modified VHF excitation exhibited improved electronic properties at higher growth rates than the RF deposited samples.

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