Electronic Properties of Wide Bandgap Pentenary Chalcopyrite Alloys and Their Photovoltaic Devices

2006 ◽  
Author(s):  
Adam Halverson ◽  
Shiro Nishiwaki ◽  
William Shafarman ◽  
J. Cohen
Keyword(s):  
Electronic Properties ◽  
Wide Bandgap ◽  
Photovoltaic Devices

Energetics and Optimal Molecular Packing for Singlet Fission in BN-doped Perylenes: Electronic Adiabatic State Basis Screening

2021 ◽  
Author(s):  
Anurag Singh ◽  
Alexander Humeniuk ◽  
Merle Insa Silja Röhr
Keyword(s):  
Electronic Properties ◽  
Molecular Packing ◽  
Photovoltaic Devices ◽  
Singlet Fission ◽  
Adiabatic State

Singlet fission has the potential to increase the efficiency of photovoltaic devices, but the design of suitable chromophores is notoriously difficult. Both the electronic properties of the monomer and the...

Star-shaped heptamers of discotic dyes as new materials for photovoltaic devices

2004 ◽  
Vol 836 ◽  
Author(s):  
S. Holger Eichhorn ◽  
Nicholas Fox ◽  
Bryan Bornais
Keyword(s):  
Liquid Crystal ◽  
Electronic Properties ◽  
Photovoltaic Devices ◽  
New Materials ◽  
Discotic Liquid Crystal ◽  
P Type ◽  
Potential Use

AbstractPotentially n-type and p-type semi-conducting discotic liquid crystal dyes are linked together to star-shaped heptamers, which might self-organize into super-columns of separated p-type and n-type columnar stacks. Their synthesis, mesomorphism, and electronic properties will be discussed along with their potential use in photovoltaic devices.

Defects in Copper Indium Aluminum Diselenide Films and their Impact on Photovoltaic Device Performance

2003 ◽  
Vol 763 ◽  
Author(s):  
Jennifer T. Heath ◽  
J. David Cohen ◽  
William N. Shafarman
Keyword(s):  
Electronic Properties ◽  
Photovoltaic Device ◽  
Absorber Layer ◽  
Device Performance ◽  
Photovoltaic Devices ◽  
Al Content ◽  
Copper Indium

AbstractThe electronic properties of polycrystalline CuIn1-xAlxSe2 (CIAS) films, which are incorporated as the absorber layer in photovoltaic devices, have been studied to better understand limitations on device performance. These studies have shown that compared to lower Al content films and to CuIn1-yGaySe2films, films with x ≥ 0.29 are relatively intrinsic, spatially nonuniform, and have broader bandtails characterized by much higher Urbach energies. This indicates that the CIAS films with x ≥ 0.29 are significantly more disordered than lower Al content CIAS or corresponding CIGS films, which likely negatively impacts the resulting photovoltaic device performance.

scholarly journals Fullerene−Oligophenylenevinylene Hybrids:  Synthesis, Electronic Properties, and Incorporation in Photovoltaic Devices

2000 ◽  
Vol 122 (31) ◽  
pp. 7467-7479 ◽  
Author(s):  
Jean-François Eckert ◽  
Jean-François Nicoud ◽  
Jean-François Nierengarten ◽  
Sheng-Gao Liu ◽  
Luis Echegoyen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Photovoltaic Devices

Molybdenum incorporated Cu1.69ZnSnS4 kesterite photovoltaic devices with bilayer microstructure and tunable optical-electronic properties

Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 777-787 ◽  
Author(s):  
Siarhei Zhuk ◽  
Terence Kin Shun Wong ◽  
Shreyash Sudhakar Hadke ◽  
Stener Lie ◽  
Asim Guchhait ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Photovoltaic Devices

scholarly journals Understanding VOC and performance deficit in wide bandgap perovskite photovoltaic devices

2021 ◽  
Vol 225 ◽  
pp. 111015
Author(s):  
Ramez Hosseinian Ahangharnejhad ◽  
Jared D. Friedl ◽  
Adam B. Phillips ◽  
Michael J. Heben
Keyword(s):  
Wide Bandgap ◽  
Photovoltaic Devices ◽  
Performance Deficit ◽  
And Performance ◽  
Perovskite Photovoltaic

Characterization of the Electronic Properties of Wide Bandgap CuIn(SeS)2 Alloys

2005 ◽  
Vol 865 ◽  
Author(s):  
Adam F. Halverson ◽  
Peter T. Erslev ◽  
JinWoo Lee ◽  
J. David Cohen ◽  
William N. Shafarman
Keyword(s):  
Low Temperature ◽  
Electronic Properties ◽  
Temperature Regime ◽  
Wide Bandgap ◽  
Drive Level ◽  
The Other ◽  
Defect Band ◽  
Electron Collection ◽  
Sulfur Containing

AbstractThe electronic properties of sulfur containing CIS chalcopyrite alloys have been characterized using junction capacitance methods. Two devices were examined; one containing CuIn(S,Se)2 alloy with a 1:2 S:Se ratio and a bandgap near 1.15eV, and the other an endpoint CuInS2 alloy with a bandgap slightly above 1.5eV. Drive-level capacitance profiling measurements indicated hole carrier densities of less than 1 x 1015 cm-3 and 1.5 x 1016 cm-3, respectively. Transient photocapacitance (TPC) sub-bandgap spectroscopic measurements revealed sharp bandtails plus a broad defect band within the bandgap of each alloy. The TPC spectra for the CuInS2 sample revealed a couple of unusual features, including a bandtail signal that reversed sign below 250K. This indicated poorer hole collection than electron collection in the low temperature regime. Comparing these results to TPC spectra obtained previously for Cu(InGa)Se2 alloys indicate some similarities but also some striking differences.

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