The Chemical Vapor Deposition of Aluminum Nitride:  Unusual Cluster Formation in the Gas Phase

1997 ◽  
Vol 119 (24) ◽  
pp. 5668-5678 ◽  
Author(s):  
Alexey Y. Timoshkin ◽  
Holger F. Bettinger ◽  
Henry F. Schaefer
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Cluster Formation ◽  
Chemical Vapor

(ClAlNH)n cluster formation in the gas phase for the chemical vapor deposition of AlN thin films

2001 ◽  
Vol 542 (1-3) ◽  
pp. 239-246 ◽  
Author(s):  
Xiao-Hong Xu ◽  
Hai-Shun Wu ◽  
Fu-Qiang Zhang ◽  
Cong-Jie Zhang ◽  
Zhi-Hao Jin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Cluster Formation ◽  
Chemical Vapor

New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride

1988 ◽  
Vol 131 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
David C. Boyd ◽  
Jen-WeI Hwang ◽  
Richard T. Haasch ◽  
John F. Evans ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Quantitative Analysis ◽  
Aluminum Nitride ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Reaction Rate ◽  
Activation Barrier ◽  
Chemical Vapor ◽  
A Value

ABSTRACTOrganometallic aluminum azides have been found to be effective precursors for the low temperature chemical vapor deposition of thin films of aluminum nitride. Quantitative analysis of the gas phase products of the reaction are used to develop an understanding of the reaction. Rate studies of the deposition were performed in the temperature range from 400 to 800°C. Below 525°C, an activation barrier of 26.4 kcal/mol was found, while above 525°C, a value of 5.23 kcal/mol was obtained. The effects of the presence of N-C bonds and the type of Al-N interaction within the precursor are evaluated.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

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