Redox-Mediated Negative Differential Resistance Behavior from Metalloproteins Connected through Carbon Nanotube Nanogap Electrodes

2007 ◽  
Vol 129 (36) ◽  
pp. 11018-11019 ◽  
Author(s):  
Qun Tang ◽  
Hye Kyung Moon ◽  
Yoonmi Lee ◽  
Seok Min Yoon ◽  
Hyun Jae Song ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Nanogap Electrodes

CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS

NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD
Keyword(s):  
Carbon Nanotube ◽  
Charge Transport ◽  
Electron Acceptor ◽  
Negative Differential Resistance ◽  
Fullerene Molecule ◽  
Differential Resistance ◽  
Electron Donors ◽  
Switching Behavior ◽  
Current Voltage ◽  
Bistable Switching

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.

Gate Controlled Negative Differential Resistance and Photoconductivity Enhancement in Carbon Nanotube Addressable Intra-connects

2008 ◽  
Vol 1142 ◽  
Author(s):  
Seon Woo Lee ◽  
Slava Rotkin ◽  
Andrei Sirenko ◽  
Daniel Lopez ◽  
Avi Kornblit ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Drain Current ◽  
Differential Resistance ◽  
Radial Breathing Mode ◽  
Light Illumination ◽  
Metal Electrodes ◽  
Current Voltage ◽  
P Type

ABSTRACTWe have observed gate-controlled N-shaped negative differential resistance (NDR) and photoconductivity enhancement in carbon nanotube (CNT) based addressable intra-connects. The intra-connects – bridges spanning across planar electrodes – were measured at room temperature. Individual single-walled CNT (SWCNT) channels were grown using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes without post-processing. The electrodes were made of cobalt. Methane and H2 gas mixture were introduced into quartz tube for an hour at 900 C, with flow rate of 1900 sccm for methane and 20 sccm for H2. We have investigated two different cases: in one case, the source-drain current-voltage, Ids-Vds, characteristics were linear. The other case exhibited nonlinear Ids-Vds characteristics. Raman scattering of the intra-connects indicated that each were made of SWCNT with radial breathing mode (RBM) at 191.9 cm-1 and 176.2 cm-1, respectively. Current-voltage Ids-Vds characteristics were measured for various Vgs from -10 V to +10 V. Negative differential resistance (NDR) was found in the Ids-Vgs curves for gate bias in the region of -3>Vgs>-6 V. The NDR peak was shifted to the negative side as the source-drain voltage was increased from Vds=0 to 0.75 V. Otherwise, the intra-connects exhibited characteristics of an ordinary p-type channel. The experiments were repeated under white light illumination. The light increases the carrier density in the channel but not in the metal electrodes and allowed us to study the effective doping of the channel without affecting the work function of the SWCNT/metal contact. The overall channel conductance increased under the light irradiation. Under illumination, the devices became more stable, as well. In summary, we have investigated contact properties between a SWCNT intra-connect and metal electrodes in a well controlled layout settings.

Negative Differential Resistance in Carbon Atomic Wire-Carbon Nanotube Junctions

Nano Letters ◽  
2008 ◽  
Vol 8 (9) ◽  
pp. 2900-2905 ◽  
Author(s):  
Khoong Hong Khoo ◽  
J. B. Neaton ◽  
Young Woo Son ◽  
Marvin L. Cohen ◽  
Steven G. Louie
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Carbon Nanotube Junctions

Negative Differential Resistance in Carbon Nanotube Field-Effect Transistors with Patterned Gate Oxide

ACS Nano ◽  
2010 ◽  
Vol 4 (6) ◽  
pp. 3356-3362 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Ville Kotimäki ◽  
Päivi Törmä
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Differential Resistance

scholarly journals Achieved negative differential resistance behavior of Si/B-substituted into a C6 chain sandwiched between capped carbon nanotube junctions

RSC Advances ◽  
2022 ◽  
Vol 12 (3) ◽  
pp. 1758-1768
Author(s):  
Najmeh Janatipour ◽  
Zabiollah Mahdavifar ◽  
Siamak Noorizadeh ◽  
Georg Schreckenbach
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Device ◽  
Carbon Nanotube Junctions ◽  
Large Peak ◽  
Peak To Valley Ratio

Multi negative differential resistance (NDR) with large peak to valley ratio (PVR) and rectifying actions were observed for a CNT|C–(B–C)2–C|CNT molecular device.

Negative Differential Resistance: Gate Controlled and Photoconductance Enhancement in Carbon Nanotube Intraconnects

Nano Letters ◽  
2009 ◽  
Vol 9 (4) ◽  
pp. 1369-1373 ◽  
Author(s):  
S. W. Lee ◽  
A. Kornblit ◽  
D. Lopez ◽  
S. V. Rotkin ◽  
A. A. Sirenko ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance
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