scholarly journals Achieved negative differential resistance behavior of Si/B-substituted into a C6 chain sandwiched between capped carbon nanotube junctions

RSC Advances ◽  
2022 ◽  
Vol 12 (3) ◽  
pp. 1758-1768
Author(s):  
Najmeh Janatipour ◽  
Zabiollah Mahdavifar ◽  
Siamak Noorizadeh ◽  
Georg Schreckenbach
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Device ◽  
Carbon Nanotube Junctions ◽  
Large Peak ◽  
Peak To Valley Ratio

Multi negative differential resistance (NDR) with large peak to valley ratio (PVR) and rectifying actions were observed for a CNT|C–(B–C)2–C|CNT molecular device.

Negative Differential Resistance in Carbon Atomic Wire-Carbon Nanotube Junctions

Nano Letters ◽  
2008 ◽  
Vol 8 (9) ◽  
pp. 2900-2905 ◽  
Author(s):  
Khoong Hong Khoo ◽  
J. B. Neaton ◽  
Young Woo Son ◽  
Marvin L. Cohen ◽  
Steven G. Louie
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Carbon Nanotube Junctions

Multipeak Negative-Differential-Resistance Molecular Device

Small ◽  
2008 ◽  
Vol 4 (1) ◽  
pp. 55-58 ◽  
Author(s):  
Elad D. Mentovich ◽  
Itshak Kalifa ◽  
Alexander Tsukernik ◽  
Ariel Caster ◽  
Natalie Rosenberg-Shraga ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Device

CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS

NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD
Keyword(s):  
Carbon Nanotube ◽  
Charge Transport ◽  
Electron Acceptor ◽  
Negative Differential Resistance ◽  
Fullerene Molecule ◽  
Differential Resistance ◽  
Electron Donors ◽  
Switching Behavior ◽  
Current Voltage ◽  
Bistable Switching

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.

Electrode conformation-induced negative differential resistance and rectifying performance in a molecular device

2009 ◽  
Vol 95 (16) ◽  
pp. 163109 ◽  
Author(s):  
X. Q. Deng ◽  
J. C. Zhou ◽  
Z. H. Zhang ◽  
H. Zhang ◽  
M. Qiu ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Device

Redox-Mediated Negative Differential Resistance Behavior from Metalloproteins Connected through Carbon Nanotube Nanogap Electrodes

2007 ◽  
Vol 129 (36) ◽  
pp. 11018-11019 ◽  
Author(s):  
Qun Tang ◽  
Hye Kyung Moon ◽  
Yoonmi Lee ◽  
Seok Min Yoon ◽  
Hyun Jae Song ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Nanogap Electrodes

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

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