Heats of Formation of Niobium Nitride, Tantalum Nitride and Zirconium Nitride from Combustion Calorimetry

1956 ◽  
Vol 78 (14) ◽  
pp. 3261-3263 ◽  
Author(s):  
Alla D. Mah ◽  
Norma L. Gellert
Keyword(s):  
Niobium Nitride ◽  
Combustion Calorimetry ◽  
Tantalum Nitride ◽  
Zirconium Nitride ◽  
Heats Of Formation

Microstructure Coating Influence for Optimized Diamond Deposition

2012 ◽  
Vol 706-709 ◽  
pp. 2898-2903 ◽  
Author(s):  
Angéline Poulon-Quintin ◽  
Cyril Faure ◽  
Lionel Teulé-Gay ◽  
Jean Pierre Manaud
Keyword(s):  
Diffusion Barrier ◽  
Multilayer Coating ◽  
Cutting Tools ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Buffer Layers ◽  
Tantalum Nitride ◽  
Zirconium Nitride ◽  
Diamond Deposition ◽  
Multilayer Systems

Diamond films grown by Chemical Vapor Deposition (CVD) are widely used as surface overlay coating onto WC-Co cutting tools to develop their performances. To improve the diamond adhesion with the substrate, many pre-treatment methods have been applied such as giving a suitable diffusion barrier layer on the substrates. Single zirconium and tantalum nitride layers have been sputtered onto WC-Co substrates as diffusion barriers and buffer layers under specific reactive sputtering conditions. Microstructure of the tantalum nitride layer has been controlled using process parameters in order to understand mechanisms occurring during Co diffusion in correlation with microstructure. Moreover, a multilayer coating composed of TaN and ZrN thin film sequences as diffusion barrier is also evaluated. To improve the nuclei density of diamond during CVD processing, a thin Mo extra layer has been added (500 nm) whatever the diffusion barrier used. In this study, bilayer and multilayer systems have been tested to optimize nanocrystalline CVD diamond deposition grown with negative biased substrates. For all systems, after diamond deposition, a massive carburization of molybdenum and tantalum nitride is observable whereas zirconium nitride is not. A TEM study is done to improve understanding of phenomena occurring at the interfaces during the process. The key role played by each layer microstructure is discussed.

scholarly journals Anodic Behavior of Niobium Nitride and Tantalum Nitride in Aqueous Solutions

1985 ◽  
Vol 53 (7) ◽  
pp. 504-507 ◽  
Author(s):  
Masayuki MORITA ◽  
Fumitsugu TACHIHARA ◽  
Yoshiharu MATSUDA ◽  
Hisayuki MIZUNO
Keyword(s):  
Aqueous Solutions ◽  
Niobium Nitride ◽  
Tantalum Nitride ◽  
Anodic Behavior

Tetramethylthiuram Monosulfide and Tetramethylthiuram Disulfide: Heats of Formation and the S—S Thermochemical Bond Energy

1962 ◽  
Vol 35 (3) ◽  
pp. 661-664
Author(s):  
W. D. Good ◽  
J. L. Lacina ◽  
J. P. McCullough
Keyword(s):  
Bond Energy ◽  
Combustion Calorimetry ◽  
Heats Of Formation ◽  
Normal Alkane ◽  
Tetramethylthiuram Disulfide ◽  
Heats Of Combustion

Abstract The heats of combustion and formation were determined for tetramethylthiuram monosulfide [bis-(dimethylthiocarbamoyl) sulfide] and tetramethylthiuram disulfide [bis-(dimethylthiocarbamoyl) disulfide]. The S—S thermochemical bond energy in tetramethylthiuram disulfide was shown to be about the same as in normal alkane disulfides and in S8. Rotating-bomb combustion calorimetry was found satisfactory for compounds that contain both sulfur and nitrogen.

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