Deliberate modification of the behavior of n-type cadmium telluride/electrolyte interfaces by surface etching. Removal of Fermi level pinning

1981 ◽  
Vol 85 (25) ◽  
pp. 3778-3787 ◽  
Author(s):  
Shinichi Tanaka ◽  
James A. Bruce ◽  
Mark S. Wrighton
Keyword(s):  
Fermi Level ◽  
Cadmium Telluride ◽  
Fermi Level Pinning ◽  
Surface Etching

UHV Model Experiments of Electrochemical Etching of GaAs BY H2O/Br2

1996 ◽  
Vol 451 ◽  
Author(s):  
O. Henrion ◽  
A. Klein ◽  
C. Ettenkofer ◽  
W. Jaegermann
Keyword(s):  
Fermi Level ◽  
Low Temperatures ◽  
Cleavage Plane ◽  
Electrochemical Etching ◽  
Band Bending ◽  
Model Experiments ◽  
Fermi Level Pinning ◽  
Surface Etching

ABSTRACTTo investigate the initial steps of GaAs etching Br2 and H2O were (co)adsorbed onto the (110) cleavage plane at 100 K and the interaction investigated by SXPS and LEED. H2O is dissociatively adsorbed at low temperatures and leads to Fermi level pinning close to midgap. Br2 leads, depending on coverage, to the formation of bromides of different stoichiometries. During annealing to 290 K the bromides mostly evaporate from the surface (etching). Br2 and H2O coadsorption leads to Ga-oxide remaining on the surface. For the reactive interfaces band bending is not observed. The results of the adsorption experiments are compared to electrochemically prepared surfaces.

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Different Fermi-level pinning positions between epitaxial and rotational Al/Si interfaces

1994 ◽  
Vol 50 (7) ◽  
pp. 4893-4896 ◽  
Author(s):  
Y. Miura ◽  
S. Fujieda ◽  
K. Hirose
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning

Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions

2021 ◽  
pp. 4299-4305
Author(s):  
Henry Yu ◽  
Sunny Gupta ◽  
Alex Kutana ◽  
Boris I. Yakobson
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning
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