Adsorption of tetracyanoethylene on a nickel(111) surface studied by Auger electron spectroscopy, thermal desorption spectroscopy, and Raman spectroscopy

1985 ◽  
Vol 89 (5) ◽  
pp. 862-867 ◽  
Author(s):  
Fu Ming Pan ◽  
John C. Hemminger ◽  
S. Ushioda
Keyword(s):  
Raman Spectroscopy ◽  
Auger Electron Spectroscopy ◽  
Thermal Desorption ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Thermal Desorption Spectroscopy

Identification of Arsenic Surface Species on the Si (100) Surface

1981 ◽  
Vol 5 ◽  
Author(s):  
S. C. Perino ◽  
C. R. Helms
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Desorption ◽  
Electron Spectroscopy ◽  
Silicon Surface ◽  
Auger Electron ◽  
Thermal Desorption Spectroscopy ◽  
Surface Species

ABSTRACTThe molecular character of arsenic adsorbed on the Si (100) surface has been investigated using thermal desorption spectroscopy (TDS) and Auger electron spectroscopy (AES). A variety of arsenic surface species were deposited on the silicon surface by employing different evaporation sources, including metallic arsenic, arsine gas, and chips of GaAs crystals. We present coverage dependent spectra showing the desorption of As4 tetramers at 350°C and As2 dimers at 900°C. The loosely bound arsenic is adsorbed from the solid evaporation sources only and resides on the surface as tetramers. The tightly bound arsenic does not form multiple layers and the high desorption temperatures suggests the adsorbed arsenic exists as monomers.

Adsorption of oxygen on Rh(110): a LEED, Auger electron spectroscopy and thermal desorption study

1992 ◽  
Vol 260 (1-3) ◽  
pp. 7-13 ◽  
Author(s):  
G. Comelli ◽  
V.R. Dhanak ◽  
M. Kiskinova ◽  
N. Pangher ◽  
G. Paolucci ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Desorption ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Desorption Study

The Interaction of Laser Generated Methyl Radicals with Cd, Te, and CdTe Surfaces

1989 ◽  
Vol 158 ◽  
Author(s):  
J.J. Zinck ◽  
G.L. Olson ◽  
P.D. Brewer ◽  
J.E. Jensen
Keyword(s):  
Mass Spectrometry ◽  
Auger Electron Spectroscopy ◽  
Thermal Desorption ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ultrahigh Vacuum ◽  
Methyl Radicals ◽  
Methyl Radical ◽  
Desorption Mass Spectrometry ◽  
193 Nm

ABSTRACTThe mechanism of the interaction of methyl radicals with Cd, Te, and CdTe surfaces has been studied in ultrahigh vacuum by Auger electron spectroscopy and thermal desorption mass spectrometry. Methyl radicals generated by the laser photodissociation of acetone at 193 nm efficiently etch both Te and Te-rich CdTe surfaces. However, there is no evidencefor reaction of methyl radicals with Cd or stoichiometric CdTe. A temperature dependencein the rate of methyl radical etching of Te-rich CdTe is related to a competition between acetone scavanging of radicals on the surface and reaction of radicals to form volatile metalorganics. Acetone itself has a small but finite reaction probability with Te and Te-rich CdTe surfaces.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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