The Interaction of Laser Generated Methyl Radicals with Cd, Te, and CdTe Surfaces

1989 ◽  
Vol 158 ◽  
Author(s):  
J.J. Zinck ◽  
G.L. Olson ◽  
P.D. Brewer ◽  
J.E. Jensen

ABSTRACTThe mechanism of the interaction of methyl radicals with Cd, Te, and CdTe surfaces has been studied in ultrahigh vacuum by Auger electron spectroscopy and thermal desorption mass spectrometry. Methyl radicals generated by the laser photodissociation of acetone at 193 nm efficiently etch both Te and Te-rich CdTe surfaces. However, there is no evidencefor reaction of methyl radicals with Cd or stoichiometric CdTe. A temperature dependencein the rate of methyl radical etching of Te-rich CdTe is related to a competition between acetone scavanging of radicals on the surface and reaction of radicals to form volatile metalorganics. Acetone itself has a small but finite reaction probability with Te and Te-rich CdTe surfaces.

1981 ◽  
Vol 5 ◽  
Author(s):  
S. C. Perino ◽  
C. R. Helms

ABSTRACTThe molecular character of arsenic adsorbed on the Si (100) surface has been investigated using thermal desorption spectroscopy (TDS) and Auger electron spectroscopy (AES). A variety of arsenic surface species were deposited on the silicon surface by employing different evaporation sources, including metallic arsenic, arsine gas, and chips of GaAs crystals. We present coverage dependent spectra showing the desorption of As4 tetramers at 350°C and As2 dimers at 900°C. The loosely bound arsenic is adsorbed from the solid evaporation sources only and resides on the surface as tetramers. The tightly bound arsenic does not form multiple layers and the high desorption temperatures suggests the adsorbed arsenic exists as monomers.


1992 ◽  
Vol 260 (1-3) ◽  
pp. 7-13 ◽  
Author(s):  
G. Comelli ◽  
V.R. Dhanak ◽  
M. Kiskinova ◽  
N. Pangher ◽  
G. Paolucci ◽  
...  

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