In situinfrared reflection and transmission absorption spectroscopy study of surface reactions in selective chemical‐vapor deposition of tungsten using WF6and SiH4

1993 ◽  
Vol 73 (9) ◽  
pp. 4637-4643 ◽  
Author(s):  
Nobuyoshi Kobayashi ◽  
Yoshitaka Nakamura ◽  
Hidekazu Goto ◽  
Yoshio Homma
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Reflection And Transmission ◽  
Selective Chemical

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Combining Molecular Dynamics and Monte Carlo Simulations to Model Chemical Vapor Deposition: Application to Diamond

1992 ◽  
Vol 278 ◽  
Author(s):  
D.W. Brenner ◽  
D.H. Robertson ◽  
R.J. Carty ◽  
D. Srivastava ◽  
B.J. Garrison
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Md Simulations ◽  
Monte Carlo Algorithm ◽  
Surface Collision ◽  
Classical Trajectories

AbstractGas-surface reactions of the type that contribute to growth during the chemical vapor deposition (CVD) of diamond films are generally completed in picoseconds, well within timescales accessible by molecular dynamics (MD) simulations. For low-pressure deposition, however, the time between collisions for a surface site can be microseconds, which makes direct modeling of CVD crystal growth impossible using standard MD methods. To effectively bridge this discrepancy in timescales, the gas-surface reactions can be modeled using MD trajectories, and then this data can be used to define probabilities in a Monte Carlo algorithm where each step represents a gas-surface collision. We illustrate this approach using the reaction of atomic hydrogen with a diamond (111) surface as an example, where we use abstraction and sticking probabilities generated using classical trajectories in a simple Monte Carlo algorithm to determine the number of open sites as a function of temperature. We also include models for the thermal desorption of hydrogen that predict that growth temperatures are not restricted by the thermal loss of chemisorbed hydrogen.

Selective chemical vapor deposition of tungsten for microelectromechanical structures

1989 ◽  
Vol 20 (1-2) ◽  
pp. 123-133 ◽  
Author(s):  
N.C. Macdonald ◽  
L.Y. Chen ◽  
J.J. Yao ◽  
Z.L. Zhang ◽  
J.A. McMillan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Chemical
Sign in / Sign up

Export Citation Format

Share Document