An Experimental Study of .beta.-SiC Epitaxial Film Growth in a Horizontal Chemical Vapor Deposition Reactor

1995 ◽  
Vol 34 (5) ◽  
pp. 1859-1867 ◽  
Author(s):  
B. Bahavar ◽  
R. J. McCluskey ◽  
M. I. Chaudhry
Keyword(s):  
Experimental Study ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Film Growth ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reactor ◽  
Epitaxial Film Growth

Epitaxial film growth of chromium dioxide by low pressure chemical vapor deposition using chromium carbonyl

2010 ◽  
Vol 518 (23) ◽  
pp. 6853-6857 ◽  
Author(s):  
Jinwen Wang ◽  
Manjit Pathak ◽  
Xing Zhong ◽  
Patrick LeClair ◽  
Tonya M. Klein ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chromium Dioxide ◽  
Chromium Carbonyl ◽  
Pressure Chemical ◽  
Epitaxial Film Growth

On the optimization of a dc arcjet diamond chemical vapor deposition reactor

1996 ◽  
Vol 11 (3) ◽  
pp. 694-702 ◽  
Author(s):  
S. W. Reeve ◽  
W. A. Weimer ◽  
D. S. Dandy
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Methyl Radical ◽  
Chemical Kinetic Model ◽  
Model Calculations ◽  
Chemical Vapor Deposition Reactor

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.

J124 Experimental study on mechanism of TiN film growth by thermal chemical vapor deposition

2012 ◽  
Vol 2012 (0) ◽  
pp. 303-304
Author(s):  
Hiroki Yamamoto ◽  
Ken-ichirou Tanoue ◽  
Yuya Hatori ◽  
Tatuo Nisimura ◽  
Yuken Iwamoto
Keyword(s):  
Experimental Study ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Tin Film
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