Electrical Properties and Electronic States of Molecular Conductors Based on Unsymmetrical Organometallic-Dithiolene Gold(III) Complexes

2008 ◽  
Vol 47 (12) ◽  
pp. 5495-5502 ◽  
Author(s):  
Kazuya Kubo ◽  
Akiko Nakao ◽  
Yasuyuki Ishii ◽  
Takashi Yamamoto ◽  
Masafumi Tamura ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic States ◽  
Molecular Conductors

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND MACROSCOPIC ELECTRICAL PROPERTIES OF METAL-COVERED Si(111) SURFACES

1993 ◽  
Vol 07 (22) ◽  
pp. 3817-3876 ◽  
Author(s):  
SHUJI HASEGAWA ◽  
SHOZO INO
Keyword(s):  
Electrical Properties ◽  
Electronic States ◽  
High Energy ◽  
Schottky Barriers ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Surface Conductance ◽  
Tunneling Microscopy ◽  
Band Bending ◽  
Scale Structures

In this review, we discuss the relation between the atomic-scale structures (atomic arrangements and electronic states) and the macroscopic electrical properties (surface conductance and Schottky barriers) of metal(Ag, Au, or In)-covered Si (111) surfaces. These surfaces have been one of the most intensively investigated systems with the use of a variety of modern surface science techniques, and diversified information at atomic scales has been obtained. The data of reflection high-energy electron diffraction, scanning tunneling microscopy/spectroscopy, photoemission spectroscopies, and others are utilized here for characterizing the structures. Surface conductance and Schottky barriers, on the other hand, have also been the major areas in semiconductor physics for, especially device-oriented, research, but these have rarely been studied in combination with atomic-scale structures. These electrical properties have recently been found to be crucially dependent on the local atomic structures of well-defined surfaces/interfaces. The atomic arrangements and the resulting surface/interface electronic states govern the Fermi-level pinning and band bending which determine the electrical properties of semiconductor surfaces/interfaces.

scholarly journals Electronic States of Single-Component Molecular Conductors [M(tmdt)2]

2013 ◽  
Vol 82 (5) ◽  
pp. 054711 ◽  
Author(s):  
Hitoshi Seo ◽  
Shoji Ishibashi ◽  
Yuichi Otsuka ◽  
Hidetoshi Fukuyama ◽  
Kiyoyuki Terakura
Keyword(s):  
Electronic States ◽  
Single Component ◽  
Molecular Conductors

Structural and Electrical Properties of Novel Molecular Conductors Based on Extended-TTF Donors BDT-TTP and I−Anions

2003 ◽  
Vol 76 (1) ◽  
pp. 97-102 ◽  
Author(s):  
HengBo Cui ◽  
Takeo Otsuka ◽  
Akiko Kobayashi ◽  
Yohji Misaki ◽  
Hayao Kobayashi
Keyword(s):  
Electrical Properties ◽  
Molecular Conductors ◽  
Structural And Electrical Properties

An approach to the control of dimensionality of molecular conductors. Structure and electrical properties of (BMDT-TTF)(TCNQ)

Physica B+C ◽  
1986 ◽  
Vol 143 (1-3) ◽  
pp. 512-514
Author(s):  
Hayao Kobayashi ◽  
Reizo Kato ◽  
Akiko Kobayashi ◽  
Yutaka Nishio ◽  
Koji Kajita ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Conductors

scholarly journals Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution

2019 ◽  
Vol 20 (2) ◽  
pp. 127-132
Author(s):  
Yu.V. Stadnyk ◽  
V.V. Romaka ◽  
V.A. Romaka ◽  
A.M. Нoryn ◽  
L.P. Romaka ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electronic Structure ◽  
Electrical Properties ◽  
Band Gap ◽  
Electronic States ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Density Of Electronic States ◽  
Donor And Acceptor ◽  
Donor Acceptor

The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.

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