Structures and electrical properties of molecular conductors based on bis-fused TTF donors with bis(alkylthio) groups

2006 ◽  
Vol 6 (5) ◽  
pp. 943-947 ◽  
Author(s):  
M. Noda ◽  
Y. Misaki ◽  
K. Tanaka
Keyword(s):  
Electrical Properties ◽  
Molecular Conductors

Electrical Properties and Electronic States of Molecular Conductors Based on Unsymmetrical Organometallic-Dithiolene Gold(III) Complexes

2008 ◽  
Vol 47 (12) ◽  
pp. 5495-5502 ◽  
Author(s):  
Kazuya Kubo ◽  
Akiko Nakao ◽  
Yasuyuki Ishii ◽  
Takashi Yamamoto ◽  
Masafumi Tamura ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic States ◽  
Molecular Conductors

Structural and Electrical Properties of Novel Molecular Conductors Based on Extended-TTF Donors BDT-TTP and I−Anions

2003 ◽  
Vol 76 (1) ◽  
pp. 97-102 ◽  
Author(s):  
HengBo Cui ◽  
Takeo Otsuka ◽  
Akiko Kobayashi ◽  
Yohji Misaki ◽  
Hayao Kobayashi
Keyword(s):  
Electrical Properties ◽  
Molecular Conductors ◽  
Structural And Electrical Properties

An approach to the control of dimensionality of molecular conductors. Structure and electrical properties of (BMDT-TTF)(TCNQ)

Physica B+C ◽  
1986 ◽  
Vol 143 (1-3) ◽  
pp. 512-514
Author(s):  
Hayao Kobayashi ◽  
Reizo Kato ◽  
Akiko Kobayashi ◽  
Yutaka Nishio ◽  
Koji Kajita ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Conductors

scholarly journals High Pressure Crystal Structure and Electrical Properties of a Single Component Molecular Crystal [Ni(dddt)2] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate)

Molecules ◽  
2019 ◽  
Vol 24 (10) ◽  
pp. 1843
Author(s):  
Hengbo Cui ◽  
Takao Tsumuraya ◽  
Hamish H.-M. Yeung ◽  
Chloe S. Coates ◽  
Mark R. Warren ◽  
...  
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Electrical Properties ◽  
Molecular Crystal ◽  
Density Functional ◽  
Nodal Line ◽  
Single Component ◽  
Molecular Conductors ◽  
Cell Parameters ◽  
Pressure Independent

Single-component molecular conductors form an important class of materials showing exotic quantum phenomena, owing to the range of behavior they exhibit under physical stimuli. We report the effect of high pressure on the electrical properties and crystal structure of the single-component crystal [Ni(dddt)2] (where dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate). The system is isoelectronic and isostructural with [Pd(dddt)2], which is the first example of a single-component molecular crystal that exhibits nodal line semimetallic behavior under high pressure. Systematic high pressure four-probe electrical resistivity measurements were performed up to 21.6 GPa, using a Diamond Anvil Cell (DAC), and high pressure single crystal synchrotron X-ray diffraction was performed up to 11.2 GPa. We found that [Ni(dddt)2] initially exhibits a decrease of resistivity upon increasing pressure but, unlike [Pd(dddt)2], it shows pressure-independent semiconductivity above 9.5 GPa. This correlates with decreasing changes in the unit cell parameters and intermolecular interactions, most notably the π-π stacking distance within chains of [Ni(dddt)2] molecules. Using first-principles density functional theory (DFT) calculations, based on the experimentally-determined crystal structures, we confirm that the band gap decreases with increasing pressure. Thus, we have been able to rationalize the electrical behavior of [Ni(dddt)2] in the pressure-dependent regime, and suggest possible explanations for its pressure-independent behavior at higher pressures.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

Sign in / Sign up

Export Citation Format

Share Document