Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlN

1996 ◽  
Vol 449 ◽  
Author(s):  
J. A. Majewski ◽  
M. Städele ◽  
P. Vogl

ABSTRACTWe present first-principles studies of the effect of biaxial (OOOl)-strain on the electronic structure of wurtzite GaN, and A1N. We provide accurate predictions of the valence band splittings as a function of strain, which may facilitate the interpretation of data from strained samples. The conduction and valence band effective mass tensors for A1N and GaN are also presented. The computed crystal-field and spin-orbit splittings in unstrained materials as well as the computed deformation potentials are in accord with available experimental data. We show that the numerically computed band energies can be excellently represented in terms of a 6-band k · p model. The present calculations are based on the first-principles pseudopotential method within the local-density formalism and include the spin-orbit interactions non-perturbatively.

Author(s):  
J. A. Majewski ◽  
M. Städele ◽  
P. Vogl

We present first-principles studies of the effect of biaxial (0001)-strain on the electronic structure of wurtzite GaN, AlN, and InN. We provide accurate predictions for the valence band splittings as a function of strain which greatly facilitates the interpretation of data from samples with unintentional growth-induced strain. The present calculations are based on the total-energy pseudopotential method within the local-density formalism and include the spin-orbit interaction nonperturbatively. For a given biaxial strain, all structural parameters are determined by minimization of the total energy with respect to the electronic and ionic degrees of freedom. Our calculations predict that the valence band state Γ9(Γ6) lies energetically above the Γ7(Γ1) states in GaN and InN, in contrast to the situation in AlN. In all three nitrides, we find that the ordering of these two levels becomes reversed for some value of biaxial strain. In GaN, this crossing takes place already at 0.32% tensile strain. For larger tensile strains, the top of the valence band becomes well separated from the lower states. The computed crystal-field and spin-orbit splittings in unstrained materials as well as the computed deformation potentials agree well with the available experimental data.


1995 ◽  
Vol 384 ◽  
Author(s):  
Zhi-Qiang Li ◽  
Yuichi Hashi ◽  
Jing-Zhi Yu ◽  
Kaoru Ohno ◽  
Yoshiyuki Kawazoe

ABSTRACTThe electronic structure and magnetic properties of rhodium clusters with sizes of 1 - 43 atoms embedded in the nickel host are studied by the first-principles spin-polarized calculations within the local density functional formalism. Single Rh atom in Ni matrix is found to have magnetic moment of 0.45μB. Rh13 and Rhl 9 clusters in Ni matrix have lower magnetic moments compared with the free ones. The most interesting finding is tha.t Rh43 cluster, which is bulk-like nonmagnetic in vacuum, becomes ferromagnetic when embedded in the nickel host.


1992 ◽  
Vol 06 (06) ◽  
pp. 309-321 ◽  
Author(s):  
W.Y. CHING ◽  
MING-ZHU HUANG ◽  
YONG-NIAN XU ◽  
FANQI GAN

The electronic structure and optical properties of crystalline C 60 and their pressure dependence have been studied by first-principles local density calculations. It is shown that fcc C 60 has a low dielectric constant and an optical spectrum rich in structures. The spectrum shows five disconnected absorption bands in the 1.4 to 7.0 eV region with sharp structures in each band that can be attributed to critical point transitions. This is a manifestation of the localized molecular structure coupled with long range crystalline order unique to the C 60 crystal. At a sufficient high pressure, the structures in the optical spectrum start to merge due to the merging of the bands. These results are in good agreement with some recent experimental measurements.


2018 ◽  
Vol 25 (3) ◽  
pp. 899-905 ◽  
Author(s):  
Patric Zimmermann ◽  
Robert J. Green ◽  
Maurits W. Haverkort ◽  
Frank M. F. de Groot

Some initial instructions for theQuanty4RIXSprogram written in MATLAB®are provided. The program assists in the calculation of 1s 2p RIXS and 1s 2p RIXS–MCD spectra usingQuanty. Furthermore, 1s XAS and 2p 3d RIXS calculations in different symmetries can also be performed. It includes the Hartree–Fock values for the Slater integrals and spin–orbit interactions for several 3dtransition metal ions that are required to create the .lua scripts containing all necessary parameters and quantum mechanical definitions for the calculations. The program can be used free of charge and is designed to allow for further adjustments of the scripts.


2008 ◽  
Vol 1104 ◽  
Author(s):  
Myung Joon Han ◽  
Xiangang Wan ◽  
Sergej Y Savrasov

AbstractExpected to provide a clue about the origin of zero moment in the bulk phase of Plutonium, Pu1-xAmx alloys have attracted a great attention, in which upon doping the system transforms from the Kondo lattice to the diluted impurity limit. To understand the electronic structure and the magnetic properties of Pu in different crystal environments, we performed fully self-consistent first-principles calculations of the PuAm system based on the local density approximation (LDA) combined with static (LDA+U) and dynamic corrections (LDA+DMFT) for on-site electron correlations. The electronic structure strongly depends on the level of approximation for correlation effects. The exchange interactions between Pu 5f electrons and the Kondo screening strength were estimated and compared, which provide a new insight to Pu magnetism.


2009 ◽  
Vol 23 (19) ◽  
pp. 2339-2352 ◽  
Author(s):  
LI BIN SHI ◽  
SHUANG CHENG ◽  
RONG BING LI ◽  
LI KANG ◽  
JIAN WEI JIN ◽  
...  

Density of states and band structure of wurtzite ZnO are calculated by the CASTEP program based on density functional theory and plane-wave pseudopotential method. The calculations are carried out in axial and unaxial strains, respectively. The results of density of states in different strains show that the bottom of the conduction band is always dominated by Zn 4s, and the top of valence band is always dominated by O 2p. The variation of the band gap calculated from band structure is also discussed. In addition, p-d repulsion is used in investigating the variation of the top of the valence band in different strains and the results can be verified by electron density difference.


1994 ◽  
Vol 357 ◽  
Author(s):  
M. W. Finnis ◽  
C. Kruse ◽  
U. SchÖnberger

AbstractWe discuss the recent first principles calculations of the properties of interfaces between metals and oxides. This type of calculation is parameter-free, and exploits the density functional theory in the local density approximation to obtain the electronic structure of the system. At the same time the equilibrium atomic structure is sought, which minimises the excess energy of the interface. Up to now calculations of this type have been made for a few model interfaces which are atomically coherent, that is with commensurate lattices. Examples are Ag/MgO and Nb/Al2O3. In these cases it has been possible to predict the structures observed by high resolution electron microscopy. The calculations are actually made in a supercell geometry, in which there are alternating nanolayers of metal and ceramic. Because of the effectiveness of metallic screening in particular, the interfaces between the nanolayers do not interfere much with each other.Besides the electronic structure of the interface, such calculations have provided values of the ideal work of adhesion. Electrostatic image forces in conjunction with the elementary ionic model provide a simple framework for understanding the results.An important role of such calculations is to develop intuition about the nature of the bonding, including the effects of charge transfer, which has formerly only been described in an empirical way. It may then be possible to build atomistic models of the metal/ceramic interaction which have a sound physical basis and can be calibrated against ab initio results. Simpler models are necessary if larger systems, including misfit dislocations and other defects, are to be simulated, with a view to understanding the atomic processes of growth and failure. Another area in which ab initio calculations can be expected to contribute is in the chemistry of impurity segregation and its effect at interfaces. Such theoretical tools are a natural partner to the experimental technique of high resolution electron energy loss spectroscopy for studying the local chemical environment at an interface.


2015 ◽  
Vol 3 (13) ◽  
pp. 3087-3094 ◽  
Author(s):  
Wei-Bing Zhang ◽  
Zhi-Bo Song ◽  
Liu-Ming Dou

Halogenated silicene, with enhanced stability compared with silicene, presents a moderate and tunable direct gap with small carrier effective mass and improved elastic properties.


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