Synthesis, Crystal Structure, and High Temperature Transport Properties of p-Type Cu2Zn1–xFexSnSe4

2013 ◽  
Vol 52 (24) ◽  
pp. 14364-14367 ◽  
Author(s):  
Yongkwan Dong ◽  
Hsin Wang ◽  
George S. Nolas
RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.


2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.


1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.


2016 ◽  
Vol 237 ◽  
pp. 1-6 ◽  
Author(s):  
Gilles Daigre ◽  
Patrick Gougeon ◽  
Philippe Gall ◽  
Régis Gautier ◽  
Olivier Guillou ◽  
...  

ChemInform ◽  
2016 ◽  
Vol 47 (24) ◽  
Author(s):  
Gilles Daigre ◽  
Patrick Gougeon ◽  
Philippe Gall ◽  
Regis Gautier ◽  
Olivier Guillou ◽  
...  

2003 ◽  
Vol 793 ◽  
Author(s):  
Theodora Kyratsi ◽  
Duck Young Chung ◽  
Jeff S. Dyck ◽  
Ctirad Uher ◽  
Sangeeta Lal ◽  
...  

ABSTRACTSolid solution series of the type K2Bi8-xSbxSe13, K2-xRbxBi8Se13 as well as K2Bi8Se13-xSx were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band gaps and their thermoelectric properties were studied. The distribution Se/S appears to be more uniform than the distribution of the Sb and Rb atoms in the β-K2Bi8Se13 structure that shows preference in specific sites in the lattice. Band gap is mainly affected by Sb and S substitution. Seebeck coefficient measurements showed n-type character for of all Se/S members. In the Bi/Sb series an enhancement of p-type character was observed. The thermoelectric performance as well as preliminary high temperature measurements suggest the potential of these materials for high temperature applications.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Alan Thompson ◽  
Jeff Sharp ◽  
C.J Rawn ◽  
B.C. Chackoumakos

AbstractGeTe, a small bandgap semiconductor that has native p-type defects due to Ge vacancies, is an important constituent in the thermoelectric material known as “TAGS” [1]. TAGS is an acronym for alloys of GeTe with AgSbTe2, and compositions are normally designated as TAGS-x, where x is the fraction of GeTe. TAGS-85 is the most important with regard to applications, and there also is commercial interest in TAGS-80. The crystal structure of GeTe1+δ has a composition-dependent phase transformation at a temperature ranging from 430°C (δ = 0) to ∼ 400°C (δ = 0.02) [2]. The high temperature form is cubic. The low temperature form is rhombohedral for δ < 0.01, as is the case for good thermoelectric performance. Addition of AgSbTe2 shifts the phase transformation to lower temperatures, and one of the goals of this work is a systematic study of the dependence of transformation temperature on the parameter x. We present results on phase transformations and associated instabilities in TAGS compositions in the range of 70-85 at.% GeTe.


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