Pressure Dependence of Gas-Phase Reaction Rates

2004 ◽  
Vol 81 (6) ◽  
pp. 832 ◽  
Author(s):  
Stéphanie de Persis ◽  
Alain Dollet ◽  
Francis Teyssandier
Keyword(s):  
Gas Phase ◽  
Pressure Dependence ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction

SiC HTCVD Simulation Modified by Sublimation Etching

2006 ◽  
Vol 527-529 ◽  
pp. 107-110 ◽  
Author(s):  
Yasuo Kito ◽  
Emi Makino ◽  
Kei Ikeda ◽  
Masao Nagakubo ◽  
Shoichi Onda
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Reaction Model ◽  
Inductive Heating ◽  
Present Calculation ◽  
Quasi Equilibrium ◽  
Phase Reaction ◽  
Vapor Pressures ◽  
Gas Phase Reaction ◽  
Sticking Coefficients

High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A vertical cylindrical reactor was used in an RF inductive heating furnace and the temperature was more than 2200. SiH4 and C3H8 were used as source gases and H2 as carrier gas. A gas phase reaction model from the literature was used on the condition that the gas phase reaction is a quasi-equilibrium state. It was found that the major species were Si, Si2C, SiC2 and C2H2 in the gas phase reaction model as well as in the thermodynamic equilibrium calculation. Sublimation etching was considered in the surface reaction rates by modifying partial pressures of species with equilibrium vapor pressures. CFD-ACE+ and MALT2 software packages were used in the present calculation. The sticking coefficients were determined by fitting the calculated growth rates to the experimental ones. The simulated growth rate in a different reactor is in good agreement with the experimental value, using the same sticking coefficients. The present simulation could be useful to design a new reactor and to find optimum conditions.

Gas‐Phase Reaction Rates of Some Positive Ions with Water at 296°K

1970 ◽  
Vol 53 (9) ◽  
pp. 3745-3751 ◽  
Author(s):  
Carleton J. Howard ◽  
Howard W. Rundle ◽  
Frederick Kaufman
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Positive Ions

Rate coefficients for the gas-phase reaction of OH radicals with dimethyl sulfide: temperature and O2partial pressure dependence

2006 ◽  
Vol 8 (6) ◽  
pp. 728-736 ◽  
Author(s):  
Mihaela Albu ◽  
Ian Barnes ◽  
Karl H. Becker ◽  
Iulia Patroescu-Klotz ◽  
Raluca Mocanu ◽  
...  
Keyword(s):  
Gas Phase ◽  
Pressure Dependence ◽  
Dimethyl Sulfide ◽  
Rate Coefficients ◽  
Oh Radicals ◽  
Phase Reaction ◽  
Gas Phase Reaction

Macrocyclic chemistry without solvents: Gas phase reaction rates

1993 ◽  
Vol 65 (3) ◽  
pp. 423-428 ◽  
Author(s):  
D. V. Dearden ◽  
H. Zhang ◽  
I.-H. Chu ◽  
P. Wong ◽  
Qizhu Chen
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction
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