Upper limits to the gas phase reaction rates of nitrous acid with ammonia and oxygen(3P) atoms

1978 ◽  
Vol 82 (25) ◽  
pp. 2753-2754 ◽  
Author(s):  
E. W. Kaiser ◽  
S. M. Japar
Keyword(s):  
Gas Phase ◽  
Nitrous Acid ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Upper Limits

scholarly journals Reactive quenching of electronically excited NO<sub>2</sub><sup>∗</sup> and NO<sub>3</sub><sup>∗</sup> by H<sub>2</sub>O as potential sources of atmospheric HO<sub><i>x</i></sub> radicals

2018 ◽  
Vol 18 (19) ◽  
pp. 14005-14015 ◽  
Author(s):  
Terry J. Dillon ◽  
John N. Crowley
Keyword(s):  
Gas Phase ◽  
Laser Excitation ◽  
Pulsed Laser ◽  
Work Rate ◽  
Rate Coefficients ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Upper Limit ◽  
Upper Limits ◽  
Electronically Excited

Abstract. Pulsed laser excitation of NO2 (532–647 nm) or NO3 (623–662 nm) in the presence of H2O was used to initiate the gas-phase reaction NO2∗+H2O → products (Reaction R5) and NO3∗+H2O → products (Reaction R12). No evidence for OH production in Reactions (R5) or (R12) was observed and upper limits for OH production of k5b/k5<1×10-5 and k12b/k12<0.03 were assigned. The upper limit for k5b∕k5 renders this reaction insignificant as a source of OH in the atmosphere and extends the studies (Crowley and Carl, 1997; Carr et al., 2009; Amedro et al., 2011) which demonstrate that the previously reported large OH yield by Li et al. (2008) was erroneous. The upper limit obtained for k12b∕k12 indicates that non-reactive energy transfer is the dominant mechanism for Reaction (R12), though generation of small but significant amounts of atmospheric HOx and HONO cannot be ruled out. In the course of this work, rate coefficients for overall removal of NO3∗ by N2 (Reaction R10) and by H2O (Reaction R12) were determined: k10=(2.1±0.1)×10-11 cm3 molecule−1 s−1 and k12=(1.6±0.3)×10-10 cm3 molecule−1 s−1. Our value of k12 is more than a factor of 4 smaller than the single previously reported value.

SiC HTCVD Simulation Modified by Sublimation Etching

2006 ◽  
Vol 527-529 ◽  
pp. 107-110 ◽  
Author(s):  
Yasuo Kito ◽  
Emi Makino ◽  
Kei Ikeda ◽  
Masao Nagakubo ◽  
Shoichi Onda
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Reaction Model ◽  
Inductive Heating ◽  
Present Calculation ◽  
Quasi Equilibrium ◽  
Phase Reaction ◽  
Vapor Pressures ◽  
Gas Phase Reaction ◽  
Sticking Coefficients

High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A vertical cylindrical reactor was used in an RF inductive heating furnace and the temperature was more than 2200. SiH4 and C3H8 were used as source gases and H2 as carrier gas. A gas phase reaction model from the literature was used on the condition that the gas phase reaction is a quasi-equilibrium state. It was found that the major species were Si, Si2C, SiC2 and C2H2 in the gas phase reaction model as well as in the thermodynamic equilibrium calculation. Sublimation etching was considered in the surface reaction rates by modifying partial pressures of species with equilibrium vapor pressures. CFD-ACE+ and MALT2 software packages were used in the present calculation. The sticking coefficients were determined by fitting the calculated growth rates to the experimental ones. The simulated growth rate in a different reactor is in good agreement with the experimental value, using the same sticking coefficients. The present simulation could be useful to design a new reactor and to find optimum conditions.

Gas‐Phase Reaction Rates of Some Positive Ions with Water at 296°K

1970 ◽  
Vol 53 (9) ◽  
pp. 3745-3751 ◽  
Author(s):  
Carleton J. Howard ◽  
Howard W. Rundle ◽  
Frederick Kaufman
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Positive Ions

Macrocyclic chemistry without solvents: Gas phase reaction rates

1993 ◽  
Vol 65 (3) ◽  
pp. 423-428 ◽  
Author(s):  
D. V. Dearden ◽  
H. Zhang ◽  
I.-H. Chu ◽  
P. Wong ◽  
Qizhu Chen
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction

A reaction class approach for modeling gas phase reaction rates

1999 ◽  
Vol 1 (6) ◽  
pp. 1061-1065 ◽  
Author(s):  
Thanh N. Truong ◽  
Wendell T. Duncan ◽  
Max Tirtowidjojo
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction
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